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FJP5021 Datasheet

  • FJP5021

  • High Voltage and High Reliability

  • 5頁(yè)

  • FAIRCHILD

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FJP5021
FJP5021
High Voltage and High Reliability
鈥?High Speed Switching : t
F
= 0.1碌s (Typ.)
鈥?Wide SOA
1
TO-220
2.Collector
3.Emitter
1.Base
NPN Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
Parameter
Value
800
500
7
5
10
2
50
150
- 55 ~ 150
Units
V
V
V
A
A
A
W
擄C
擄C
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
V
CEX
(sus)
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
C
ob
f
T
t
ON
t
STG
t
F
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn On Time
Storage Time
Fall Time
Test Condition
I
C
= 1mA, I
E
= 0
I
C
= 5mA, I
B
= 0
I
E
= 1mA, I
C
= 0
I
C
= 2.5A, I
B1
= -I
B2
= 1A
L = 1mH, Clamped
V
CB
= 500V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 0.6A
V
CE
= 5V, I
C
= 3A
I
C
= 3A, I
B
= 0.6A
I
C
= 3A, I
B
= 0.6A
V
CB
= 10V, I
E
= 0, f=1MHz
V
CE
= 10V, I
C
= 0.6A
V
CC
= 200V
I
C
= 5I
B1
= -2.5I
B2
= 4A
R
L
= 50鈩?/div>
80
18
0.5
3
0.1
0.3
15
8
Min.
800
500
7
500
10
10
50
1
1.5
V
V
pF
MHz
碌s
碌s
碌s
Typ.
Max.
Units
V
V
V
V
碌A(chǔ)
碌A(chǔ)
h
FE
Classification
Classification
h
FE1
R
15 ~ 30
O
20 ~ 40
Y
30 ~ 50
漏2003 Fairchild Semiconductor Corporation
Rev. A, May 2003

FJP5021 產(chǎn)品屬性

  • 200

  • 分離式半導(dǎo)體產(chǎn)品

  • 晶體管(BJT) - 單路

  • -

  • NPN

  • 5A

  • 500V

  • 1V @ 600mA，3A

  • -

  • 15 @ 600mA，5V

  • 50W

  • 18MHz

  • 通孔

  • TO-220-3

  • TO-220

  • 散裝

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