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FGP30N6S2D Datasheet

  • FGP30N6S2D

  • 600V, SMPS II Series N-Channel IGBT with Anti-Parallel Steal...

  • 275.65KB

  • 12頁

  • FAIRCHILD

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FGH30N6S2D / FGP30N6S2D / FGB30N6S2D
July 2001
FGH30N6S2D / FGP30N6S2D / FGB30N6S2D
600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth
TM
Diode
General Description
The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are
Low Gate Charge, Low Plateau Voltage SMPS II IGBTs
combining the fast switching speed of the SMPS IGBTs
along with lower gate charge and plateau voltage and ava-
lanche capability (UIS). These LGC devices shorten delay
times, and reduce the power requirement of the gate drive.
These devices are ideally suited for high voltage switched
mode power supply applications where low conduction
loss, fast switching times and UIS capability are essential.
SMPS II LGC devices have been specially designed for:
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Power Factor Correction (PFC) circuits
Full bridge topologies
Half bridge topologies
Push-Pull circuits
Uninterruptible power supplies
Zero voltage and zero current switching circuits
Features
鈥?100kHz Operation at 390V, 14A
鈥?200kHZ Operation at 390V, 9A
鈥?600V Switching SOA Capability
鈥?Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125
o
C
鈥?Low Gate Charge . . . . . . . . . 23nC at V
GE
= 15V
鈥?Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
鈥?UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 150mJ
鈥?Low Conduction Loss
IGBT formerly Developmental Type TA49336
Diode formerly Developmental Type TA49390
Package
JEDEC STYLE TO-247
Symbol
C
E
C
G
JEDEC STYLE TO-220AB
JEDEC STYLE TO-263AB
E
C
G
C
G
E
G
E
Device Maximum Ratings
T
C
= 25擄C unless otherwise noted
Symbol
BV
CES
I
C25
I
C110
I
CM
V
GES
V
GEM
SSOA
E
AS
P
D
T
J
Parameter
Collector to Emitter Breakdown Voltage
Collector Current Continuous, T
C
= 25擄C
Collector Current Continuous, T
C
= 110擄C
Collector Current Pulsed (Note 1)
Gate to Emitter Voltage Continuous
Gate to Emitter Voltage Pulsed
Switching Safe Operating Area at T
J
= 150擄C, Figure 2
Pulsed Avalanche Energy, I
CE
= 12A, L = 2mH, V
DD
= 50V
Power Dissipation Total T
C
= 25擄C
Power Dissipation Derating T
C
> 25擄C
Operating Junction Temperature Range
Ratings
600
45
20
108
鹵20
鹵30
60A at 600V
150
167
1.33
-55 to 150
mJ
W
W/擄C
擄C
Units
V
A
A
A
V
V
T
STG
Storage Junction Temperature Range
-55 to 150
擄C
CAUTION: Stresses above those listed in 鈥淎bsolute Maximum Ratings鈥?may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
漏2001 Fairchild Semiconductor Corporation
FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A

FGP30N6S2D 產(chǎn)品屬性

  • 400

  • 分離式半導體產(chǎn)品

  • IGBT - 單路

  • -

  • -

  • 600V

  • 2.5V @ 15V，12A

  • 45A

  • 167W

  • 標準型

  • 通孔

  • TO-220-3

  • TO-220AB

  • 管件

  • FGP30N6S2D_NLFGP30N6S2D_NL-ND

FGP30N6S2D相關(guān)型號PDF文件下載

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