FDZ291P
October 2005
FDZ291P
P-Channel 1.5 V Specified PowerTrench
廬
BGA MOSFET
General Description
Combining Fairchild鈥檚 advanced 1.5V specified
PowerTrench process with state of the art BGA
packaging, the FDZ291P minimizes both PCB space
This BGA MOSFET embodies a
and R
DS(ON)
.
breakthrough in packaging technology which enables
the device to combine excellent thermal transfer
characteristics, high current handling capability, ultra-
low profile packaging, low gate charge, and low R
DS(ON)
.
Features
鈥?/div>
鈥?.6 A, 鈥?0 V
R
DS(ON)
= 40 m鈩?@ V
GS
= 鈥?.5 V
R
DS(ON)
= 60 m鈩?@ V
GS
= 鈥?.5 V
R
DS(ON)
= 160 m鈩?@ V
GS
= 鈥?.5 V
鈥?/div>
Occupies only 2.25 mm
2
of PCB area.
Less than 50% of the area of a SSOT-6
鈥?/div>
Ultra-thin package: less than 0.85 mm height when
mounted to PCB
鈥?/div>
Outstanding thermal transfer characteristics:
4 times better than SSOT-6
鈥?/div>
Ultra-low Q
g
x R
DS(ON)
figure-of-merit
鈥?/div>
High power and current handling capability.
S
Applications
鈥?/div>
Battery management
鈥?/div>
Load switch
鈥?/div>
Battery protection
GATE
G
D
Bottom
Top
T
A
=25 C unless otherwise noted
o
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
鈥?Continuous
鈥?Pulsed
Parameter
Ratings
鈥?0
鹵8
(Note 1a)
Units
V
V
A
W
擄C
鈥?.6
鈥?0
1.7
鈥?5 to +150
Power Dissipation for Single Operation
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
胃JA
R
胃JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1a)
72
2
擄C/W
Package Marking and Ordering Information
Device Marking
D
Device
FDZ291P
Reel Size
7鈥?/div>
Tape width
8mm
Quantity
3000 units
漏2005
Fairchild Semiconductor Corporation
FDZ291P Rev. C1 (W)
FDZ291P 產(chǎn)品屬性
10,000
分離式半導(dǎo)體產(chǎn)品
FET - 單
PowerTrench®
MOSFET P 通道，金屬氧化物
邏輯電平門
20V
4.6A
40 毫歐 @ 4.6A，4.5V
1V @ 250µA
13nC @ 4.5V
1010pF @ 10V
1.7W
表面貼裝
9-WFBGA
9-BGA
帶卷 (TR)
FDZ291PTR
FDZ291P相關(guān)型號PDF文件下載
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型號
版本
描述
廠商
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