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FDU068AN03L Datasheet

  • FDU068AN03L

  • N-Channel PowerTrench?? MOSFET 30V, 35A, 6.8mз

  • 11頁(yè)

  • FAIRCHILD

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FDD068AN03L / FDU068AN03L
December 2003
FDD068AN03L / FDU068AN03L
N-Channel PowerTrench
廬
MOSFET
30V, 35A, 6.8m鈩?/div>
Features
鈥?r
DS(ON)
= 5.7m鈩?(Typ.), V
GS
= 4.5V, I
D
= 35A
鈥?Q
g(5)
= 24nC (Typ.), V
GS
= 5V
鈥?Low Miller Charge
鈥?Low Q
RR
Body Diode
鈥?UIS Capability (Single Pulse and Repetitive Pulse)
鈥?Qualified to AEC Q101
Applications
鈥?12V Automotive Load Control
鈥?Starter / Alternator Systems
鈥?Electronic Power Steering Systems
鈥?ABS
鈥?DC-DC Converters
G
S
D
I-PAK
(TO-251AA)
G D S
G
D
D-PAK
TO-252
(TO-252)
S
MOSFET Maximum Ratings
T
C
= 25擄C unless otherwise noted
Symbol
V
DSS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
< 154
o
C, V
GS
= 10V)
I
D
Continuous (T
C
<
Pulsed
E
AS
P
D
T
J
, T
STG
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above
25
o
C
Operating and Storage Temperature
150
o
C,
V
GS
= 4.5V)
V
GS
= 10V, with R
胃JA
=
52
o
C/W)
Continuous (T
amb
=
25
o
C,
35
35
17
Figure 4
168
80
0.53
-55 to 175
A
A
A
A
mJ
W
W/
o
C
o
C
Parameter
Ratings
30
鹵20
Units
V
V
Thermal Characteristics
R
胃JC
R
胃JA
R
胃JA
Thermal Resistance Junction to Case TO-252, TO-251
Thermal Resistance Junction to Ambient TO-252, TO-251
Thermal Resistance Junction to Ambient TO-252,
1in
2
copper pad area
1.88
100
52
o
o
C/W
C/W
o
C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
漏2003 Fairchild Semiconductor Corporation
FDD068AN03L / FDU068AN03L Rev. B1

FDU068AN03L 產(chǎn)品屬性

  • High Voltage Switches for Power Processing

  • 75

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • PowerTrench®

  • MOSFET N 通道，金屬氧化物

  • 邏輯電平門(mén)

  • 30V

  • 35A

  • 5.7 毫歐 @ 35A，10V

  • 2.5V @ 250µA

  • 60nC @ 10V

  • 2525pF @ 15V

  • 80W

  • 通孔

  • TO-251-3 短引線，IPak，TO-251AA

  • I-Pak

  • 管件

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