100V, 0.4A, 2.5鈩?/div>
Features
鈥?r
DS(ON)
= 1.45鈩?(Typ.), V
GS
= 4.5V, I
D
= 0.4A
鈥?Q
g
(tot) = 2.36nC (Typ.), V
GS
= 10V
鈥?Low Miller Charge
鈥?Low Q
RR
Body Diode
Applications
鈥?Servo Motor Load Control
鈥?DC-DC converters
DRAIN
(FLANGE)
D
GATE
DRAIN
SOURCE
G
D
S
SOT-223
MOSFET Maximum Ratings
T
A
= 25擄C unless otherwise noted
Symbol
V
DSS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
I
D
Continuous (T
A
= 25
o
C, V
GS
= 10V, R
胃JA
= 110
o
C/W)
Continuous (T
A
=
Pulsed
E
AS
P
D
T
J
, T
STG
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above
25
o
C
Operating and Storage Temperature
25
o
C,
V
GS
= 4.5V, R
胃JA
=
110
o
C/W)
0.54
0.4
Figure 4
6.3
1.13
9
-55 to 150
A
A
A
mJ
W
mW/
o
C
o
C
Parameter
Ratings
100
鹵20
Units
V
V
Thermal Characteristics
R
胃JA
R
胃JA
R
胃JA
Thermal Resistance Junction to Ambient SOT-223, Pad area = 0.171 in
2
Thermal Resistance Junction to Ambient SOT-223, Pad area = 0.068 in
2
110
128
147
o
o
C/W
C/W
Thermal Resistance Junction to Ambient SOT-223, Pad area = 0.026 in
2
o
C/W
Package Marking and Ordering Information
Device Marking
461
Device
FDT461N
Package
SOT-223
Reel Size
13鈥?/div>
Tape Width
12mm
Quantity
2500 units
漏2004 Fairchild Semiconductor Corporation
FDT461N Rev. A1
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