FDT439N
June 1999
FDT439N
N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor
General Description
This N-Channel Enhancement mode field effect transistor
is produced using Fairchild Semiconductor's proprietary,
high cell density, DMOS technology. This very high
density process is especially tailored to minimize on-
state resistance, and provide superior switching
performance. These products are well suited to low
voltage, low current applications such as notebook
computer power management, battery powered
circuits, and DC motor control.
Features
聲
聲
聲
6.3 A, 30 V. R
DS(on)
= 0.045
鈩?/div>
@ V
GS
= 4.5 V
R
DS(on)
= 0.058
鈩?/div>
@ V
GS
= 2.5 V
Fast switching speed.
High power and current handling capabitlity in a
widely used surface mount package.
Applications
聲
聲
聲
DC/DC converter
Load switch
Motor driving
D
D
D
D
S
D
SOT-223
S
G
D
S
G
SOT-223
*
(J23Z)
G
G
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
T
A
= 25擄C unless otherwise noted
Parameter
FDT439N
30
(Note 1a)
Units
V
V
A
W
鹵
8
6.3
20
3
1.3
1.1
-55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
stg
Operating and Storage Junction Temperature Range
擄
C
Thermal Characteristics
R
胃
JA
R
胃
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
42
12
擄
C/W
擄
C/W
Package Marking and Ordering Information
Device Marking
FDT439N
Device
FDT439N
Reel Size
13鈥欌€?/div>
Tape Width
12mm
Quantity
2500 units
錚?999
Fairchild Semiconductor Corporation
FDT439N, Rev. C
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