音影先锋亚洲天堂网|电影世界尽头的爱完整版播放|国产 熟女 91|高清无码免费观看欧美日韩|韩国一区二区三区黄色录像|美女亚洲加勒比在线|亚洲综合网 开心五月|7x成人在线入口|成人网站免费日韩毛片区|国产黄片?一级?二级?三级

FDS8926A Datasheet

  • FDS8926A

  • Dual N-Channel Enhancement Mode Field Effect Transistor

  • 8頁

  • FAIRCHILD

掃碼查看芯片數(shù)據(jù)手冊

上傳產(chǎn)品規(guī)格書

PDF預覽

February 1998
FDS8926A
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
SO-8 N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process is especially tailored to provide superior switching
performance and minimize on-state resistance. These devices
are particularly suited for low voltage applications such as disk
drive motor control, battery powered circuits where fast
switching, low in-line power loss, and resistance to transients
are needed.
Features
5.5 A, 30 V. R
DS(ON)
= 0.030
鈩?/div>
@ V
GS
= 4.5 V
R
DS(ON)
= 0.038
鈩?/div>
@ V
GS
= 2.5 V.
High density cell design for extremely low R
DS(ON)
.
Combines low gate threshold (fully enhanced at 2.5V) with
high breakdown voltage of 30 V.
High power and current handling capability in a widely
used surface mount package.
Dual MOSFET in surface mount package.
SOT-23
SuperSOT
TM
-6
SuperSOT
TM
-8
SO-8
SOT-223
SOIC-16
D2
D1
D1
D2
5
6
G2
7
8
4
3
2
1
S
FD 6A
2
89
S2
G1
SO-8
pin
1
S1
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
T
A
= 25
o
C unless other wise noted
FDS8926A
30
鹵8
(Note 1a)
Units
V
V
A
5.5
20
2
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
W
1.6
1
0.9
-55 to 150
擄C
T
J
,T
STG
R
胃
JA
R
胃
JC
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
擄C/W
擄C/W
FDS8926A Rev.B
漏 1998 Fairchild Semiconductor Corporation

FDS8926A 產(chǎn)品屬性

  • High Voltage Switches for Power Processing

  • 2,500

  • 分離式半導體產(chǎn)品

  • FET - 陣列

  • -

  • 2 個 N 溝道（雙）

  • 邏輯電平門

  • 30V

  • 5.5A

  • 30 毫歐 @ 5.5A，4.5V

  • 1V @ 250µA

  • 28nC @ 4.5V

  • 900pF @ 10V

  • 900mW

  • 表面貼裝

  • 8-SOIC（0.154"，3.90mm 寬）

  • SO-8

  • 帶卷 (TR)

  • FDS8926A-NDFDS8926ATR

FDS8926A相關型號PDF文件下載

掃碼下載APP，
一鍵連接廣大的電子世界。

在線人工客服

買家服務：
賣家服務：
技術客服：

0571-85317607

網(wǎng)站技術支持

13606545031

客服在線時間周一至周五
9:00-17:30

關注官方微信號，
第一時間獲取資訊。

建議反饋

聯(lián)系人：

聯(lián)系方式：

按住滑塊，拖拽到最右邊
>>
感謝您向阿庫提出的寶貴意見，您的參與是維庫提升服務的動力！意見一經(jīng)采納，將有感恩紅包奉上哦！