鈥?/div>
Low gate charge
High performance trench technology for extremely
low R
DS(ON)
.
High power and handling capability in a widely used
surface mount package.
Q2
D1
D
D2
D
D1
D
D
D2
5
6
Q1
4
3
2
1
SO-8
Pin 1
SO-8
G2
S2
G
G1
S
S1
S
7
8
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
鈥?Continuous
T
A
=25
o
C unless otherwise noted
Parameter
Q1
30
鹵16
(Note 1a)
Q2
鈥?0
鹵20
鈥?.4
鈥?0
2
1.6
1
0.9
鈥?5 to +150
Units
V
A
4.1
20
鈥?Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
擄C
Thermal Characteristics
R
胃JA
R
胃J
C
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
擄C/W
Package Marking and Ordering Information
Device Marking
FDS8333C
Device
FDS8333C
Reel Size
7鈥欌€?/div>
Tape width
12mm
Quantity
2500 units
漏2002
Fairchild Semiconductor Corporation
FDS8333C Rev C (W)
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