FDS6986AS Datasheet

IC型號：
FDS6986AS
PDF描述：
Dual Notebook Power Supply N-Channel PowerTrench SyncFET
文件大小：
177.30KB
PDF頁數(shù)：
10頁
芯片廠家：
FAIRCHILD

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FDS6986AS

March 2005

FDS6986AS

General Description

Dual Notebook Power Supply N-Channel PowerTrench

廬

SyncFET

鈩?/div>

Features

鈥?/div>

Q2:

Optimized to minimize conduction losses

Includes SyncFET Schottky body diode

DS(on)

= 20 m鈩?@ V

= 10V

DS(on)

= 28 m鈩?@ V

= 4.5V

鈥?/div>

Q1:

Optimized for low switching losses

Low gate charge (10 nC typical)

DS(on)

= 29 m鈩?@ V

= 10V

DS(on)

= 38 m鈩?@ V

= 4.5V

The FDS6986AS is designed to replace two single SO-

8 MOSFETs and Schottky diode in synchronous

DC:DC power supplies that provide various peripheral

voltages for notebook computers and other battery

powered electronic devices. FDS6986AS contains two

unique 30V, N-channel, logic level, PowerTrench

MOSFETs designed to maximize power conversion

efficiency.

The high-side switch (Q1) is designed with specific

emphasis on reducing switching losses while the low-

side switch (Q2) is optimized to reduce conduction

losses. Q2 also includes an integrated Schottky diode

using Fairchild鈥檚 monolithic SyncFET technology.

7.9A, 30V

6.5A, 30V

SO-8

Pin 1

SO-8

Absolute Maximum Ratings

Symbol

DSS

GSS

Drain-Source Voltage

Gate-Source Voltage

Parameter

- Continuous

- Pulsed

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

G D2

= 25擄C unless otherwise noted

(Note 1a)

鹵16

6.5

1.6

0.9

鈥?5 to +150

Units

Drain Current

鹵20

7.9

(Note 1a)

(Note 1b)

(Note 1c)

, T

STG

Operating and Storage Junction Temperature Range

擄C

Thermal Characteristics

胃JA

胃JC

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Device

FDS6986AS

FDS6986AS_NL (

Note 4

)

(Note 1a)

(Note 1)

Tape width

12mm

擄C/W

Quantity

2500 units

FDS6986AS Rev A(X)

Package Marking and Ordering Information

Device Marking

FDS6986AS

Reel Size

13鈥?/div>

漏2005

Fairchild Semiconductor Corporation

產(chǎn)品培訓模塊
High Voltage Switches for Power Processing
標準包裝
2,500
類別
分離式半導體產(chǎn)品
家庭
FET - 陣列
系列
PowerTrench®, SyncFET™
FET 型
2 個 N 溝道（雙）
FET 特點
邏輯電平門
漏極至源極電壓(Vdss)
30V
電流 - 連續(xù)漏極(Id) @ 25° C
6.5A，7.9A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
29 毫歐 @ 6.5A，10V
Id 時的 Vgs(th)（最大）
3V @ 250µA
閘電荷(Qg) @ Vgs
17nC @ 10V
輸入電容 (Ciss) @ Vds
720pF @ 10V
功率 - 最大
900mW
安裝類型
表面貼裝
封裝/外殼
8-SOIC（0.154"，3.90mm 寬）
供應商設備封裝
8-SO
包裝
帶卷 (TR)
其它名稱
FDS6986AS-NDFDS6986ASTR

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