FDS6912A Datasheet

IC型號(hào)：
FDS6912A
PDF描述：
Dual N-Channel, Logic Level, PowerTrenchTM MOSFET
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PDF頁(yè)數(shù)：
4頁(yè)
芯片廠家：
FAIRCHILD

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June 1998

FDS6912A

Dual N-Channel, Logic Level, PowerTrench

MOSFET

General Description

Features

6 A, 30 V. R

DS(ON)

= 0.028

鈩?/div>

@ V

= 10 V

DS(ON)

= 0.035

鈩?/div>

@ V

= 4.5 V.

Fast switching speed.

Low gate charge (typical 9 nC).

High performance trench technology for extremely low

DS(ON)

High power and current handling capability.

These N-Channel Logic Level MOSFETs are

produced using Fairchild Semiconductor's

advanced PowerTrench process that has been

especially tailored to minimize the on-state

resistance and yet maintain superior switching

performance.

These devices are well suited for low voltage and

battery powered applications where low in-line

power loss and fast switching are required.

SOT-23

SuperSOT

-6

SuperSOT -8

SO-8

SOT-223

SOIC-16

FD 2A

SO-8

Absolute Maximum Ratings

Symbol

DSS

GSS

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current - Continuous

- Pulsed

= 25

C unless other wise noted

FDS6912A

鹵20

(Note 1a)

Units

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

(Note 1c)

1.6

0.9

-55 to 150

STG

胃

Operating and Storage Temperature Range

擄C

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

擄C/W

漏 1998 Fairchild Semiconductor Corporation

FDS6912A Rev.C

產(chǎn)品培訓(xùn)模塊
High Voltage Switches for Power Processing
標(biāo)準(zhǔn)包裝
2,500
類別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 陣列
系列
PowerTrench®
FET 型
2 個(gè) N 溝道（雙）
FET 特點(diǎn)
邏輯電平門
漏極至源極電壓(Vdss)
30V
電流 - 連續(xù)漏極(Id) @ 25° C
6A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
28 毫歐 @ 6A，10V
Id 時(shí)的 Vgs(th)（最大）
3V @ 250µA
閘電荷(Qg) @ Vgs
8.1nC @ 5V
輸入電容 (Ciss) @ Vds
575pF @ 15V
功率 - 最大
900mW
安裝類型
表面貼裝
封裝/外殼
8-SOIC（0.154"，3.90mm 寬）
供應(yīng)商設(shè)備封裝
8-SOICN
包裝
帶卷 (TR)
其它名稱
FDS6912ATR

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