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FDR4410 Datasheet

  • FDR4410

  • N-Channel Enhancement Mode Field Effect Transistor

  • 4頁(yè)

  • FAIRCHILD

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April 1998
FDR4410
N-Channel Enhancement Mode Field Effect Transistor
General Description
The FDR4410 has been designed as a smaller, low cost
alternative to the popular Si4410DY.
The SuperSOT
TM
-8 package is 40% smaller than the SO-8
package.
The SuperSOT
TM
-8 advanced package design and
optimized pinout allow the typical power dissipation to be
similar to the bigger SO-8 package.
Features
9.3 A, 30 V. R
DS(ON)
= 0.013
鈩?/div>
@ V
GS
= 10 V
R
DS(ON)
= 0.020
鈩?/div>
@ V
GS
= 4.5 V.
High density cell design for extremely low R
DS(ON)
.
Proprietary SuperSOT
TM
-8 small outline surface mount
package with high power and current handling capability.
SOT-23
SuperSOT -6
TM
SuperSOT
TM
-8
SO-8
SOT-223
SOIC-16
S
D
D
S
5
6
7
4
3
2
1
10
44
D
G
pin
1
SuperSOT -8
TM
D
D
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Draint Current - Continuous
- Pulsed
Maximum Power Dissipation
T
A
= 25
o
C unless otherwise noted
FDR4410
30
鹵20
(Note 1a)
Units
V
V
A
9.3
40
(Note 1a)
(Note 1b)
(Note 1c)
1.8
1
0.9
-55 to 150
W
T
J
,T
STG
R
胃JA
R
胃JC
Operating and Storage Temperature Range
擄C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
70
20
擄C/W
擄C/W
FDR4410 Rev.C
漏 1998 Fairchild Semiconductor Corporation

FDR4410 產(chǎn)品屬性

  • Fairchild Semiconductor

  • N-Channel

  • 30 V

  • +/- 20 V

  • 9.3 A

  • Single Quint Drain Dual Source

  • + 150 C

  • SMD/SMT

  • SuperSOT-8

  • 11 ns

  • - 55 C

  • 1800 mW

  • 11 ns

  • 41 ns

FDR4410相關(guān)型號(hào)PDF文件下載

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