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FDPF39N20 Datasheet

  • FDPF39N20

  • 200V N-Channel MOSFET

  • 10頁

  • FAIRCHILD

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FDP39N20 / FDPF39N20 200V N-Channel MOSFET
March 2007
FDP39N20 / FDPF39N20
200V N-Channel MOSFET
Features
鈥?39A, 200V, R
DS(on)
= 0.066鈩?@V
GS
= 10 V
鈥?Low gate charge ( typical 38 nC)
鈥?Low C
rss
( typical 57 pF)
鈥?Fast switching
鈥?100% avalanche tested
鈥?Improved dv/dt capability
UniFET
Description
TM
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild鈥檚 proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
G
G DS
TO-220
FDP Series
TO-220F
GD S
FDPF Series
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J,
T
STG
T
L
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25擄C)
- Derate above 25擄C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Parameter
- Continuous (T
C
= 25擄C)
- Continuous (T
C
= 100擄C)
- Pulsed
(Note 1)
FDP39N20
200
39
23.4
156
鹵30
860
39
FDPF39N20
39 *
23.4
*
156
*
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
25.1
4.5
251
2.0
-55 to +150
300
59
0.48
W
W/擄C
擄C
擄C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8鈥?from Case for 5 Seconds
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
胃JC
R
胃CS
R
胃JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FDP39N20
0.5
0.5
62.5
FDPF39N20
2.1
-
62.5
Unit
擄C/W
擄C/W
擄C/W
漏2007 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FDP39N20 / FDPF39N20 Rev. A

FDPF39N20 產(chǎn)品屬性

  • 50

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • UniFET™

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 200V

  • 39A

  • 66 毫歐 @ 19.5A，10V

  • 5V @ 250µA

  • 49nC @ 10V

  • 2130pF @ 25V

  • 37W

  • 通孔

  • TO-220-3 整包

  • TO-220F

  • 管件

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