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FDP6690 Datasheet

  • FDP6690

  • 30V N-Channel PowerTrench SyncFET

  • 6頁

  • FAIRCHILD

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FDP6690S/FDB6690S
SEPTEMBER 2001
FDP6690S/FDB6690S
30V N-Channel PowerTrench
廬
SyncFET
鈩?/div>
General Description
This MOSFET is designed to replace a single MOSFET
and parallel Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
R
DS(ON)
and low gate charge. The FDP6690S includes
an integrated Schottky diode using Fairchild鈥檚
monolithic SyncFET technology. The performance of
the FDP6690S/FDB6690S as the low-side switch in a
synchronous rectifier is indistinguishable from the
performance of the FDP6035AL/FDB6035AL in parallel
with a Schottky diode.
Features
鈥?/div>
21 A, 30 V.
R
DS(ON)
= 15.5 m鈩?@ V
GS
= 10 V
R
DS(ON)
= 23.0 m鈩?@ V
GS
= 4.5 V
鈥?/div>
Includes SyncFET Schottky body diode
鈥?/div>
Low gate charge (11nC typical)
鈥?/div>
High performance trench technology for extremely
low R
DS(ON)
and fast switching
鈥?/div>
High power and current handling capability
D
D
G
G
D
TO-220
S
FDP Series
G
S
TO-263AB
FDB Series
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
T
L
Drain-Source Voltage
Gate-Source Voltage
Drain Current 鈥?Continuous
鈥?Pulsed
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
30
鹵20
(Note 1)
(Note 1)
Units
V
V
A
W
W/擄C
擄C
擄C
42
140
48
0.5
鈥?5 to +150
275
Total Power Dissipation @ T
C
= 25擄C
Derate above 25擄C
Operating and Storage Junction Temperature Range
Maximum lead temperature for soldering purposes,
1/8鈥?from case for 5 seconds
Thermal Characteristics
R
胃JC
R
胃JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
2.6
62.5
擄C/W
擄C/W
Package Marking and Ordering Information
Device Marking
FDB6690S
FDP6690S
Device
FDB6690S
FDP6690S
Reel Size
13鈥欌€?/div>
Tube
Tape width
24mm
n/a
Quantity
800 units
45
漏2001
Fairchild Semiconductor Corporation
FDP6690S/FDB6690S Rev C (W)

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