FDP6676 Datasheet

IC型號(hào)：
FDP6676
PDF描述：
30V N-Channel Logic Level PowerTrench MOSFET
文件大小：
84.04KB
PDF頁數(shù)：
5頁
芯片廠家：
FAIRCHILD

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FDP6676/FDB6676

April 2001

FDP6676/FDB6676

30V N-Channel Logic Level PowerTrench

餂?/div>

MOSFET

General Description

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized for

鈥渓ow side鈥?synchronous rectifier operation, providing an

extremely low R

DS(ON)

Features

鈥?/div>

42 A, 30 V.

DS(ON)

= 6.0 m鈩?@ V

= 10 V

DS(ON)

= 7.5 m鈩?@ V

= 4.5 V

鈥?/div>

Critical DC electrical parameters specified at

elevated temperature

鈥?/div>

High performance trench technology for extremely

low R

DS(ON)

鈥?/div>

175擄C maximum junction temperature rating

Applications

鈥?/div>

Synchronous rectifier

鈥?/div>

DC/DC converter

TO-220

FDP Series

TO-263AB

FDB Series

Absolute Maximum Ratings

Symbol

DSS

GSS

, T

STG

Drain-Source Voltage

Gate-Source Voltage

Drain Current

鈥?Continuous

鈥?Pulsed

=25

C unless otherwise noted

Parameter

Ratings

鹵

(Note 1)

Units

W擄C

擄C

240

0.48

-65 to +175

Total Power Dissipation @ T

= 25擄C

Derate above 25擄C

Operating and Storage Junction Temperature Range

Thermal Characteristics

胃JC

胃JA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

1.6

62.5

擄C/W

Package Marking and Ordering Information

Device Marking

FDP6676

FDB6676

Device

FDP6676

FDB6676

Reel Size

Tube

13鈥?/div>

Tape width

n/a

24mm

Quantity

800 units

餂?000

Fairchild Semiconductor Corporation

FDP6676/FDB6676 Rev C(W)

制造商
Fairchild Semiconductor
產(chǎn)品種類
MOSFET
晶體管極性
N-Channel
汲極/源極擊穿電壓
30 V
閘/源擊穿電壓
+/- 16 V
漏極連續(xù)電流
84 A
電阻汲極/源極 RDS（導(dǎo)通）
0.006 Ohms
配置
Single
最大工作溫度
+ 175 C
安裝風(fēng)格
Through Hole
封裝 / 箱體
TO-220
封裝
Tube
下降時(shí)間
37 ns
最小工作溫度
- 65 C
功率耗散
93 W
上升時(shí)間
10 ns
典型關(guān)閉延遲時(shí)間
93 ns

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