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FDP6676S Datasheet

  • FDP6676S

  • 30V N-Channel PowerTrench SyncFET⑩

  • 118.72KB

  • 6頁

  • FAIRCHILD

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FDP6676S/FDB6676S
October 2001
FDP6676S / FDB6676S
30V N-Channel PowerTrench
餂?/div>
SyncFET
鈩?/div>
General Description
This MOSFET is designed to replace a single MOSFET
and parallel Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
R
DS(ON)
and low gate charge. The FDP/B6676S
includes an integrated Schottky diode using Fairchild鈥檚
monolithic SyncFET technology. The performance of
the FDP/B6676S as the low-side switch in a
synchronous rectifier is indistinguishable from the
performance of the FDP/B6676 in parallel with a
Schottky diode.
Features
鈥?/div>
38 A, 30 V.
R
DS(ON)
= 6.5 m鈩?@ V
GS
= 10 V
R
DS(ON)
= 8.0 m鈩?@ V
GS
= 4.5 V
鈥?/div>
Includes SyncFET Schottky body diode
鈥?/div>
Low gate charge (40nC typical)
鈥?/div>
High performance trench technology for extremely
low R
DS(ON)
and fast switching
鈥?/div>
High power and current handling capability
鈥?/div>
D
D
G
G
D
S
TO-220
FDP Series
G
S
TO-263AB
FDB Series
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
T
L
Drain-Source Voltage
Gate-Source Voltage
Drain Current 鈥?Continuous
鈥?Pulsed
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
30
鹵16
(Note 1)
(Note 1)
Units
V
V
A
W
W/擄C
擄C
擄C
76
150
70
0.56
鈥?5 to +150
275
Total Power Dissipation @ T
C
= 25擄C
Derate above 25擄C
Operating and Storage Junction Temperature Range
Maximum lead temperature for soldering purposes,
1/8鈥?from case for 5 seconds
Thermal Characteristics
R
胃JC
R
胃JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1.8
55
擄C/W
擄C/W
Package Marking and Ordering Information
Device Marking
FDB6676S
FDP6676S
Device
FDB6676S
FDP6676S
Reel Size
13鈥欌€?/div>
Tube
Tape width
24mm
n/a
Quantity
800
45
餂?001
Fairchild Semiconductor Corporation
FDP6676S/FDB6676S Rev. C (W)

FDP6676S 產(chǎn)品屬性

  • Fairchild Semiconductor

  • N-Channel

  • 30 V

  • +/- 16 V

  • 76 A

  • 6.5 m Ohms

  • Single

  • + 150 C

  • Through Hole

  • TO-220

  • Tube

  • 31 ns

  • - 55 C

  • 70 W

  • 11 ns

  • 89 ns

FDP6676S相關型號PDF文件下載

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