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FDP3652 Datasheet

  • FDP3652

  • N-Channel PowerTrench MOSFET 100V, 61A, 16mз

  • 11頁

  • FAIRCHILD

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FDB3652 / FDP3652 / FDI3652
October 2002
FDB3652 / FDP3652 / FDI3652
N-Channel PowerTrench
廬
MOSFET
100V, 61A, 16m鈩?/div>
Features
鈥?r
DS(ON)
= 14m鈩?(Typ.), V
GS
= 10V, I
D
= 61A
鈥?Q
g
(tot) = 41nC (Typ.), V
GS
= 10V
鈥?Low Miller Charge
鈥?Low Q
RR
Body Diode
鈥?UIS Capability (Single Pulse and Repetitive Pulse)
鈥?Qualified to AEC Q101
Formerly developmental type 82769
Applications
鈥?DC/DC Converters and Off-line UPS
鈥?Distributed Power Architectures and VRMs
鈥?Primary Switch for 24V and 48V Systems
鈥?High Voltage Synchronous Rectifier
鈥?Direct Injection / Diesel Injection Systems
鈥?42V Automotive Load Control
鈥?Electronic Valve Train Systems
DRAIN
(FLANGE)
GATE
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
D
SOURCE
G
TO-263AB
FDB SERIES
TO-220AB
FDP SERIES
DRAIN
(FLANGE)
TO-262AA
FDI SERIES
S
MOSFET Maximum Ratings
T
C
= 25擄C unless otherwise noted
Symbol
V
DSS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
I
D
Continuous (T
C
= 100 C, V
GS
= 10V)
Continuous (T
amb
= 25 C, V
GS
= 10V) with R
胃JA
= 43 C/W)
Pulsed
E
AS
P
D
T
J
, T
STG
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25 C
Operating and Storage Temperature
o
o
o
o
Parameter
Ratings
100
鹵20
61
43
9
Figure 4
182
150
1.0
-55 to 175
Units
V
V
A
A
A
A
mJ
W
W/
o
C
o
C
Thermal Characteristics
R
胃JC
R
胃JA
R
胃JA
Thermal Resistance Junction to Case TO-220, TO-263, TO-262
Thermal Resistance Junction to Ambient TO-220, TO-263, TO-262 (Note 2)
Thermal Resistance Junction to Ambient TO-263, 1in copper pad area
2
1.0
62
43
o
o
o
C/W
C/W
C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
漏2002 Fairchild Semiconductor Corporation
FDB3652 / FDP3652 / FDI3652 Rev. B

FDP3652 產(chǎn)品屬性

  • High Voltage Switches for Power Processing

  • 400

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • PowerTrench®

  • MOSFET N 通道，金屬氧化物

  • 標準型

  • 100V

  • 61A

  • 16 毫歐 @ 61A，10V

  • 4V @ 250µA

  • 53nC @ 10V

  • 2880pF @ 25V

  • 150W

  • 通孔

  • TO-220-3

  • TO-220AB

  • 散裝

FDP3652相關(guān)型號PDF文件下載

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  • 英文版
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