FDN359AN Datasheet

IC型號(hào)：
FDN359AN
PDF描述：
N-Channel Logic Level PowerTrenchTM MOSFET
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266.05KB
PDF頁數(shù)：
8頁
芯片廠家：
FAIRCHILD

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April 1999

FDN359AN

N-Channel Logic Level PowerTrench

MOSFET

General Description

This N-Channel Logic Level MOSFET is produced

using

Fairchild

Semiconductor's

advanced

PowerTrench process that has been especially tailored

to minimize on-state resistance and yet maintain

superior switching performance.

These devices are well suited for low voltage and

battery powered applications where low in-line power

loss and fast switching are required.

Features

2.7 A, 30 V. R

DS(ON)

= 0.046

鈩?/div>

@ V

= 10 V

DS(ON)

= 0.060

鈩?/div>

@ V

= 4.5 V.

Very fast switching.

Low gate charge (5nC typical).

High power version of industry standard SOT-23

package. Identical pin out to SOT-23 with 30% higher

power handling capability.

SOT-23

SuperSOT

-6

SuperSOT

-8

SO-8

SOT-223

SOIC-16

SuperSOT -3

Absolute Maximum Ratings

Symbol

Parameter

= 25

C unless other wise noted

Ratings

Units

DSS

GSS

STG

胃

Drain-Source Voltage

Gate-Source Voltage

Maximum Drain Current - Continuous

- Pulsed

Maximum Power Dissipation

(Note 1a)

(Note 1b)

(Note 1a)

鹵20

2.7

0.5

0.46

-55 to 150

Operating and Storage Temperature Range

擄C

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

250

擄C/W

漏 1999 Fairchild Semiconductor Corporation

FDN359AN Rev.C

產(chǎn)品培訓(xùn)模塊
High Voltage Switches for Power Processing
標(biāo)準(zhǔn)包裝
3,000
類別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 單
系列
PowerTrench®
FET 型
MOSFET N 通道，金屬氧化物
FET 特點(diǎn)
邏輯電平門
漏極至源極電壓(Vdss)
30V
電流 - 連續(xù)漏極(Id) @ 25° C
2.7A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
46 毫歐 @ 2.7A，10V
Id 時(shí)的 Vgs(th)（最大）
3V @ 250µA
閘電荷(Qg) @ Vgs
7nC @ 5V
輸入電容 (Ciss) @ Vds
480pF @ 10V
功率 - 最大
460mW
安裝類型
表面貼裝
封裝/外殼
TO-236-3，SC-59，SOT-23-3
供應(yīng)商設(shè)備封裝
3-SSOT
包裝
帶卷 (TR)
其它名稱
FDN359ANTRFDN359AN_F095

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