FDLL3595
General Description:
A General Purpose diode that couples high forward
conductance fast switching speed and high blocking
voltages in a glass leadless LL-34 Surface Mount
package.
Placement of the Expansion Gap has no relationship to
the location of the Cathode Terminal which is indicated
by the first color band.
Cathode Band
ORANGE
YELLOW
High Conductance,
Low Leakage Diode
Absolute Maximum Ratings*
Sym
T
stg
T
J
P
D
R
OJA
W
iv
I
O
I
F
i
f
i
F(surge)
Expansion Gap
TA = 25
O
C unless otherwise noted
Parameter
Storage Temperature
Operating Junction Temperature
Total Power Dissipation at T
A
= 25
O
C
Linear Derating Factor from T
A
= 25
O
C
Thermal Resistance Junction-to-Ambient
Working Inverse Voltage
Average Rectified Current
DC Forward Current (I
F
)
Recurrent Peak Forward Current
Peak Forward Surge Current (I
FSM
) Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Value
-65 to +200
-65 to +200
500
3.33
350
125
200
500
600
1.0
4.0
Units
O
C
O
C
mW
mW/
O
C
O
C/W
V
mA
mA
mA
Amp
Amp
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
Electrical Characteristics
SYM
B
V
I
R
TA = 25
O
C unless otherwise noted
CHARACTERISTICS
Breakdown Voltage
Reverse Leakage
MIN
150
MAX
UNITS
V
I
R
V
R
V
R
V
R
V
R
I
F
I
F
I
F
I
F
I
F
I
F
TEST CONDITIONS
= 100 uA
= 125 V
= 30 V T
A
= 125
O
C
= 125 V T
A
= 125
O
C
= 180 V T
A
= 150
O
C
= 1.0 mA
= 5.0 mA
= 10 mA
= 50 mA
= 100 mA
= 200 mA
0.0 V, f = 1.0 MHz
1.0
300
500
3.0
520
600
650
750
790
0.83
680
750
800
880
920
1.00
8.0
3.0
nA
nA
nA
uA
mV
mV
mV
mV
mV
V
pF
us
V
F
Forward Voltage
C
T
Capacitance
T
RR
Reverse Recovery Time
漏 2000 Fairchild Semiconductor Corporation
V
R
=
I
F
= 10 mA V
R
= 3.5 V
R
L
= 1.0 kOhms
FDLL3595 - Rev. A
1
2
3
