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FDH038AN08A1 Datasheet

  • FDH038AN08A1

  • N-Channel PowerTrench MOSFET

  • 10頁(yè)

  • FAIRCHILD

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上傳產(chǎn)品規(guī)格書

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FDH038AN08A1
February 2003
FDH038AN08A1
N-Channel PowerTrench
MOSFET
75V, 80A, 3.8m鈩?/div>
Features
鈥?r
DS(ON)
= 3.5m鈩?(Typ.), V
GS
= 10V, I
D
= 80A
鈥?Q
g
(tot) = 125nC (Typ.), V
GS
= 10V
鈥?Internal Gate Resistor, Rg = 20鈩?(Typ.)
鈥?Low Miller Charge
鈥?Low Q
RR
Body Diode
鈥?UIS Capability (Single Pulse and Repetitive Pulse)
鈥?Qualified to AEC Q101
Formerly developmental type 82690
SOURCE
DRAIN
GATE
G
D
Applications
鈥?42V Automotive Load Control
鈥?Starter / Alternator Systems
鈥?Electronic Power Steering Systems
鈥?Electronic Valve Train Systems
鈥?DC-DC converters and Off-line UPS
鈥?Distributed Power Architectures and VRMs
鈥?Primary Switch for 24V and 48V systems
TO-247
S
MOSFET Maximum Ratings
T
C
= 25擄C unless otherwise noted
Symbol
V
DSS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
I
D
Continuous (T
C
< 158
o
C, V
GS
= 10V)
Continuous (T
A
=
Pulsed
E
AS
P
D
T
J
, T
STG
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25
o
C
Parameter
Ratings
75
鹵20
80
30
o
C/W)
22
Figure 4
1.17
450
3.0
-55 to 175
Units
V
V
A
A
A
J
W
W/
o
C
o
25
o
C,
V
GS
= 10V, with R
胃JA
=
Operating and Storage Temperature
C
Thermal Characteristics
R
胃JC
R
胃JA
Thermal Resistance Junction to Case TO-247
Thermal Resistance Junction to Ambient TO-247
0.33
30
o
C/W
o
C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
漏2003 Fairchild Semiconductor Corporation
FDH038AN08A1 Rev A

FDH038AN08A1 產(chǎn)品屬性

  • High Voltage Switches for Power Processing

  • 150

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • PowerTrench®

  • MOSFET N 通道,金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 75V

  • 80A

  • 3.8 毫歐 @ 80A,10V

  • 4V @ 250µA

  • 160nC @ 10V

  • 8665pF @ 25V

  • 450W

  • 通孔

  • TO-247-3

  • TO-247

  • 管件

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