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FDFMA3N109 Datasheet

  • FDFMA3N109

  • Integrated N-Channel PowerTrench MOSFET and Schottky Diode

  • 7頁(yè)

  • FAIRCHILD

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FDFMA3N109 Integrated N-Channel PowerTrench
廬
MOSFET and Schottky Diode
May 2006
FDFMA3N109
Integrated N-Channel PowerTrench
廬
MOSFET and Schottky Diode
General Description
This device is designed specifically as a single package
solution for a boost topology in cellular handset and
other ultra-portable applications. It features a MOSFET
with low input capacitance, total gate charge and on-
state resistance, and an independently connected
schottky diode with low forward voltage and reverse
leakage current to maximize boost efficiency.
The MicroFET 2x2 package offers exceptional thermal
performance for its physical size and is well suited to
switching and linear mode applications.
PIN 1
A NC
D
A
K
D
NC
K
G
S
D
鈥?/div>
Low profile 鈥?0.8 mm maximum 鈥?in the new package
MicroFET 2x2 mm
鈥?/div>
RoHS Compliant
Schottky:
鈥?/div>
V
F
< 0.46 V @ 500mA
Features
MOSFET:
鈥?/div>
2.9 A, 30 V R
DS(ON)
= 123 m鈩?@ V
GS
= 4.5 V
R
DS(ON)
= 140 m鈩?@ V
GS
= 3.0 V
R
DS(ON)
= 163 m鈩?@ V
GS
= 2.5 V
1
2
3
6
K
5
G
4
S
MicroFET 2x2
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
T
A
=25 C unless otherwise noted
o
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current 鈥?Continuous (T
C
= 25擄C, V
GS
= 4.5V)
鈥?Continuous (T
C
= 25擄C, V
GS
= 2.5V)
鈥?Pulsed
Power Dissipation for Single Operation
Power Dissipation for Single Operation
Operating and Storage Temperature
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
Ratings
30
鹵12
2.9
2.7
10
1.5
0.65
鈥?5 to +150
28
1
Units
V
V
A
P
D
T
J
, T
STG
V
RRM
I
O
(Note 1a)
(Note 1b)
W
擄C
V
A
Thermal Characteristics
R
胃JA
R
胃JA
R
胃JA
R
胃JA
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
83
193
101
228
擄C/W
Package Marking and Ordering Information
Device Marking
109
漏2006
Fairchild Semiconductor Corporation
Device
FDFMA3N109
Reel Size
7鈥欌€?/div>
Tape width
8mm
Quantity
3000 units
FDFMA3N109 Rev B(W)

FDFMA3N109 產(chǎn)品屬性

  • High Voltage Switches for Power Processing

  • 3,000

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • PowerTrench®

  • MOSFET N 通道，金屬氧化物

  • 二極管（隔離式）

  • 30V

  • 2.9A

  • 123 毫歐 @ 2.9A，4.5V

  • 1.5V @ 250µA

  • 3nC @ 4.5V

  • 220pF @ 15V

  • 650mW

  • 表面貼裝

  • 6-WDFN 裸露焊盤

  • 6-MicroFET（2x2）

  • 帶卷 (TR)

  • FDFMA3N109FSTRFDFMA3N109TRFDFMA3N109TR-ND

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