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FDFMA3N109_08 Datasheet

  • FDFMA3N109_08

  • Integrated N-Channel PowerTrench㈢ MOSFET and Schottky Diode

  • 7頁(yè)

  • FAIRCHILD

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April
2008
FDFMA3N109
General Description
This device is designed specifically as a single package
solution for a boost topology in cellular handset and
other ultra-portable applications. It features a MOSFET
with low input capacitance, total gate charge and on-
state resistance, and an independently connected
schottky diode with low forward voltage and reverse
leakage current to maximize boost efficiency.
The MicroFET 2x2 package offers exceptional thermal
performance for its physical size and is well suited to
switching and linear mode applications.
Integrated N-Channel PowerTrench MOSFET and Schottky Diode
Features
MOSFET:
鈥?/div>
2.9 A, 30 V R
DS(ON)
= 123 m鈩?@ V
GS
= 4.5 V
R
DS(ON)
= 140 m鈩?@ V
GS
= 3.0 V
R
DS(ON)
= 163 m鈩?@ V
GS
= 2.5 V
Schottky:
鈥?/div>
V
F
< 0.46 V @ 500mA
鈥?/div>
Low profile 鈥?0.8 mm maximum 鈥?in the new package
MicroFET 2x2 mm
鈥?/div>
HBM ESD protection level = 1.8kV typical (Note 3)
鈥?/div>
RoHS Compliant
廬
tm
PIN 1
A NC
K
D
D
A
NC
1
2
3
6
K
5
G
4
S
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
MicroFET 2x2
K
G
S
T
A
=25 C unless otherwise noted
o
D
P
D
T
J
, T
STG
V
RRM
I
O
Drain-Source Voltage
Gate-Source Voltage
Drain Current 鈥?Continuous (T
C
= 25擄C, V
GS
= 4.5V)
鈥?Continuous (T
C
= 25擄C, V
GS
= 2.5V)
鈥?Pulsed
Power Dissipation for Single Operation
Power Dissipation for Single Operation
Operating and Storage Temperature
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
Parameter
Ratings
30
鹵12
2.9
2.7
10
1.5
0.65
鈥?5 to +150
28
1
Units
V
V
A
W
擄C
V
A
(Note 1a)
(Note 1b)
Thermal Characteristics
R
胃JA
R
胃JA
R
胃JA
R
胃JA
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
83
193
101
228
擄C/W
Package Marking and Ordering Information
Device Marking
109
Device
FDFMA3N109
Reel Size
7鈥欌€?/div>
Tape width
8mm
Quantity
3000 units
FDFMA3N109 Rev B2
漏2008
Fairchild Semiconductor Corporation

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