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FDD5690 Datasheet

  • FDD5690

  • 60V N-Channel PowerTrench⑩ MOSFET

  • 7頁

  • FAIRCHILD

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FDD5690
June 1999
PRELIMINARY
FDD5690
60V N-Channel PowerTrench
TM
MOSFET
General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable R
DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power supply
designs with higher overall efficiency.
Features
聲
聲
聲
聲
30 A, 60 V. R
DS(ON)
= 0.027鈩?@ V
GS
= 10 V
R
DS(ON)
= 0.032
鈩?/div>
@ V
GS
= 6 V.
Low gate charge (23nC typical).
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
.
D
D
G
S
TO-252
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current
Maximum Drain Current
P
D
-Continuous
-Pulsed
o
G
S
T
C
=25
o
C unless otherwise noted
Parameter
Ratings
60
(Note 1)
(Note 1a)
Units
V
V
A
鹵20
30
9
100
50
3.2
1.3
-55 to +150
Maximum Power Dissipation @ T
C
= 25 C
T
A
= 25 C
T
A
= 25 C
o
o
(Note 1)
(Note 1a)
(Note 1b)
W
T
J
, T
stg
Operating and Storage Junction Temperature Range
擄C
Thermal Characteristics
R
胃
JC
R
胃
JA
Thermal Resistance, Junction-to- Case
Thermal Resistance, Junction-to- Ambient
(Note 1)
(Note 1a)
(Note 1b)
2.5
40
96
擄C/W
擄C/W
擄C/W
Package Marking and Ordering Information
Device Marking
FDD5690
Device
FDD5690
Reel Size
13鈥欌€?/div>
Tape width
16mm
Quantity
2500
錚?999
Fairchild Semiconductor Corporation
FDD5690, Rev. B

FDD5690 產(chǎn)品屬性

  • High Voltage Switches for Power Processing

  • 2,500

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • PowerTrench®

  • MOSFET N 通道，金屬氧化物

  • 邏輯電平門

  • 60V

  • 30A

  • 27 毫歐 @ 9A，10V

  • 4V @ 250µA

  • 32nC @ 10V

  • 1110pF @ 25V

  • 1.3W

  • 表面貼裝

  • TO-252-3，DPak（2 引線+接片），SC-63

  • TO-252

  • 帶卷 (TR)

  • FDD5690-NDFDD5690TR

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