FDC6322C Datasheet

IC型號：
FDC6322C
PDF描述：
Dual N & P Channel , Digital FET
文件大?。?/label>
99.72KB
PDF頁數(shù)：
7頁
芯片廠家：
FAIRCHILD

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November 1997

FDC6322C

Dual N & P Channel , Digital FET

General Description

These dual N & P Channel logic level enhancement mode field

effec transistors are produced using Fairchild's proprietary,

high cell density, DMOS technology. This very high density

process is especially tailored to minimize on-state resistance.

The device is an improved design especially for low voltage

applications as a replacement for bipolar digital transistors in

load switching applications. Since bias resistors are not

required, this dual digital FET can replace several digital

transistors with difference bias resistors.

Features

N-Ch 25 V, 0.22 A, R

DS(ON)

= 5

鈩?/div>

@ V

= 2.7 V.

P-Ch 25 V, -0.46 A, R

DS(ON)

= 1.5

鈩?/div>

@ V

= -2.7 V.

Very low level gate drive requirements allowing direct

operation in 3 V circuits. V

GS(th)

< 1.5 V.

Gate-Source Zener for ESD ruggedness.

>6kV Human Body Model

Replace NPN & PNP digital transistors.

SOT-23

SuperSOT -6

Mark: .322

SuperSOT -8

SO-8

SOT-223

SOIC-16

Absolute Maximum Ratings

Symbol

DSS

, V

GSS

, V

, I

STG

ESD

Parameter

= 25

C unless other wise noted

N-Channel

P-Channel

-25

-8

-0.46

-1

0.9

0.7

-55 to 150

擄C

Units

Drain-Source Voltage, Power Supply Voltage

Gate-Source Voltage,

Drain/Output Current

- Continuous

- Pulsed

Maximum Power Dissipation

(Note 1a)

(Note 1b)

0.22

0.5

Operating and Storage Tempature Ranger

Electrostatic Discharge Rating MIL-STD-883D

Human Body Model (100pf / 1500 Ohm)

THERMAL CHARACTERISTICS

胃JA

胃

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

140

擄C/W

漏 1997 Fairchild Semiconductor Corporation

FDC6322C.Rev B1

標(biāo)準(zhǔn)包裝
3,000
類別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 陣列
系列
-
FET 型
N 和 P 溝道
FET 特點(diǎn)
邏輯電平門
漏極至源極電壓(Vdss)
25V
電流 - 連續(xù)漏極(Id) @ 25° C
220mA，460mA
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
4 歐姆 @ 400mA，4.5V
Id 時(shí)的 Vgs(th)（最大）
1.5V @ 250µA
閘電荷(Qg) @ Vgs
0.7nC @ 4.5V
輸入電容 (Ciss) @ Vds
9.5pF @ 10V
功率 - 最大
700mW
安裝類型
表面貼裝
封裝/外殼
SOT-23-6 細(xì)型，TSOT-23-6
供應(yīng)商設(shè)備封裝
6-SSOT
包裝
帶卷 (TR)

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