FDB7030L Datasheet

IC型號：
FDB7030L
PDF描述：
N-Channel Logic Level Enhancement Mode Field Effect Transist...
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475.21KB
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4頁
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FAIRCHILD

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April 1998

FDP7030L / FDB7030L

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description

These N-Channel logic level enhancement mode power field

effect transistors are produced using Fairchild's proprietary,

high cell density, DMOS technology. This very high density

process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage

applications such as DC/DC converters and high efficiency

switching circuits where fast switching, low in-line power

loss, and resistance to transients are needed.

Features

100 A, 30 V. R

DS(ON)

= 0.007

鈩?/div>

@ V

=10 V

DS(ON)

= 0.010

鈩?/div>

@ V

=5 V

Critical DC electrical parameters specified at elevated

temperature.

Rugged internal source-drain diode can eliminate the need

for an external Zener diode transient suppressor.

High density cell design for extremely low R

DS(ON)

175擄C maximum junction temperature rating.

_________________________________________________________________________________

Absolute Maximum Ratings

Symbol

DSS

GSS

Parameter

Drain-Source Voltage

= 25擄C unless otherwise noted

FDP7030L

鹵20

(Note 1)

FDB7030L

Units

Gate-Source Voltage - Continuous

Drain Current

- Continuous

100

- Pulsed

Total Power Dissipation @ T

= 25擄C

Derate above 25擄C

STG

(Note 1)

300

125

0.83

-65 to 175

275

W/擄C

擄C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

THERMAL CHARACTERISTICS

胃

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

1.2

62.5

擄C/W

漏 1998 Fairchild Semiconductor Corporation

FDP7030L Rev.D

標(biāo)準(zhǔn)包裝
800
類別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 單
系列
PowerTrench®
FET 型
MOSFET N 通道，金屬氧化物
FET 特點(diǎn)
邏輯電平門
漏極至源極電壓(Vdss)
30V
電流 - 連續(xù)漏極(Id) @ 25° C
80A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
7 毫歐 @ 40A，10V
Id 時(shí)的 Vgs(th)（最大）
3V @ 250µA
閘電荷(Qg) @ Vgs
33nC @ 5V
輸入電容 (Ciss) @ Vds
2440pF @ 15V
功率 - 最大
68W
安裝類型
表面貼裝
封裝/外殼
TO-263-3，D²Pak（2 引線+接片），TO-263AB
供應(yīng)商設(shè)備封裝
D²PAK
包裝
帶卷 (TR)
其它名稱
FDB7030LTR

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