FDP6035AL/FDB6035AL
July 2003
FDP6035AL/FDB6035AL
N-Channel Logic Level PowerTrench
廬
MOSFET
General Description
This N-Channel Logic Level MOSFET has been
designed specifically to improve the overall efficiency of
DC/DC converters using either synchronous or
conventional switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
It has been optimized for low gate charge, low R
DS(ON)
and fast switching speed.
Features
鈥?/div>
48 A, 30 V
R
DS(ON)
= 12 m鈩?@ V
GS
= 10 V
R
DS(ON)
= 14 m鈩?@ V
GS
= 4.5 V
鈥?/div>
Critical DC electrical parameters specified at
elevated temperature
鈥?/div>
High performance trench technology for extremely
low R
DS(ON)
鈥?/div>
175擄C maximum junction temperature rating
D
D
G
G
D
S
TO-220
FDP Series
G
S
TO-263AB
FDB Series
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
鈥?Continuous
鈥?Pulsed
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
30
鹵
20
48
(Note 1)
Units
V
V
A
W
W/擄C
擄C
180
52
0.3
鈥?5 to +175
Total Power Dissipation @ T
C
= 25擄C
Derate above 25擄C
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
胃JC
R
胃JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
2.9
62.5
擄C/W
Package Marking and Ordering Information
Device Marking
FDB6035AL
FDP6035AL
Device
FDB6035AL
FDP6035AL
Reel Size
13鈥欌€?/div>
Tube
Tape width
24mm
n/a
Quantity
800 units
45
漏2003
Fairchild Semiconductor Corporation
FDP6035AL/FDB6035AL Rev D(W)
FDB6035AL 產(chǎn)品屬性
Fairchild Semiconductor
MOSFET
N-Channel
30 V
+/- 20 V
48 A
0.0125 Ohms at 10 V
Single
+ 175 C
SMD/SMT
TO-263AB
Reel
12 ns
- 65 C
52 W
12 ns
800
29 ns
FDB6035AL_NL
FDB6035AL相關(guān)型號(hào)PDF文件下載
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