鈥?/div>
62A, 200V, R
DS(on)
= 22.9m鈩?@V
GS
= 10 V
Fast switching speed
Low gate charge
High performance trench technology for extremely low R
DS(on)
High power and current handling capability
Application
鈥?PDP application
D
D
G
G
S
S
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
I
DM
E
AS
dv/dt
P
D
T
J,
T
STG
T
L
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current
- Continuous (T
C
= 25擄C)
- Continuous (T
C
= 100擄C)
- Pulsed
(Note 1)
(Note 2)
(Note 3)
Parameter
Ratings
200
鹵
30
62
39.3
see Figure 9
145
4.5
260
2.1
-55 to +150
300
Unit
V
V
A
A
A
mJ
V/ns
W
W/擄C
擄C
擄C
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25擄C)
- Derate above 25擄C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8鈥?from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
胃JC
R
胃JA
*
R
胃JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient*
Thermal Resistance, Junction-to-Ambient
Min.
--
--
--
Max.
0.48
40
62.5
Unit
擄C/W
擄C/W
擄C/W
*When mounted on the minimum pad size recommended (PCB Mount)
漏2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FDB2614 Rev. A