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FCPF11N60F Datasheet

  • FCPF11N60F

  • 600V N-Channel MOSFET

  • 837.17KB

  • 10頁

  • FAIRCHILD

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FCP11N60F/FCPF11N60F 600V N-Channel MOSFET
SuperFET
FCP11N60F
/FCPF11N60F
600V N-Channel MOSFET
Features
鈥?650V @T
J
= 150擄C
鈥?Typ. R
DS(on)
= 0.32鈩?/div>
鈥?Fast Recovery Type ( t
rr
= 120ns)
鈥?Ultra Low Gate Charge (typ. Q
g
= 40nC)
鈥?Low Effective Output Capacitance (typ. C
oss
eff.=95pF)
鈥?100% avalanche tested
TM
Description
SuperFET
TM
is, Farichild鈥檚 proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
D
!
"
G
!
G DS
! "
"
"
TO-220
GD S
TO-220F
!
S
Absolute Maximum Ratings
Symbol
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain Current
Parameter
- Continuous (T
C
= 25擄C)
- Continuous (T
C
= 100擄C)
Drain Current
- Pulsed
(Note 1)
FCP11N60F
11
7
33
鹵
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FCPF11N60F
11 *
7*
33 *
Units
A
A
A
V
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25擄C)
- Derate above 25擄C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
340
11
12.5
4.5
125
1.0
-55 to +150
300
36 *
0.29 *
mJ
A
mJ
V/ns
W
W/擄C
擄C
擄C
* Drain current limited by maximum junction termperature.
Thermal Characteristics
Symbol
R
胃JC
R
胃CS
R
胃JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
FCP11N60F
1.0
0.5
62.5
FCPF11N60F
3.5
--
62.5
Units
擄C/W
擄C/W
擄C/W
漏2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FCP11N60F/FCPF11N60F Rev. A

FCPF11N60F 產(chǎn)品屬性

  • 50

  • 分離式半導體產(chǎn)品

  • FET - 單

  • SuperFET™

  • MOSFET N 通道，金屬氧化物

  • 標準型

  • 600V

  • 11A

  • 380 毫歐 @ 5.5A，10V

  • 5V @ 250µA

  • 52nC @ 10V

  • 1490pF @ 25V

  • 36W

  • 通孔

  • TO-220-3 整包

  • TO-220F

  • 管件

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