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FCP4N60 600V N-Channel MOSFET

FCP4N60

600V N-Channel MOSFET

Features

鈥?650V @T

J

= 150擄C

鈥?Typ. R

DS(on)

= 1.0惟

鈥?Ultra low gate charge (typ. Q

g

= 12.8nC)

鈥?Low effective output capacitance (typ. C

oss

.eff = 32pF)

鈥?100% avalanche tested

SuperFET

Description

SuperFET

TM

is, Farichild鈥檚 proprietary, new generation of high

voltage MOSFET family that is utilizing an advanced charge

balance mechanism for outstanding low on-resistance and

lower gate charge performance.

This advanced technology has been tailored to minimize

conduction loss, provide superior switching performance, and

withstand extreme dv/dt rate and higher avalanche energy.

Consequently, SuperFET is very suitable for various AC/DC

power conversion in switching mode operation for system

miniaturization and higher efficiency.

January 2007

TM

D

G

G DS

TO-220

FCP Series

S

Absolute Maximum Ratings

Symbol

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt

P

D

T

J,

T

STG

T

L

Drain-Source Voltage

Drain Current

Drain Current

Gate-Source voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation

(T

C

= 25擄C)

- Derate above 25擄C

(Note 2)

(Note 1)

(Note 1)

(Note 3)

Parameter

- Continuous (T

C

= 25擄C)

- Continuous (T

C

= 100擄C)

- Pulsed

(Note 1)

FCP4N60

600

3.9

2.5

11.7

鹵

30

128

3.9

5.0

4.5

50

0.4

-55 to +150

300

Unit

V

A

A

A

V

mJ

A

mJ

V/ns

W

W/擄C

擄C

擄C

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purpose,

1/8鈥?from Case for 5 Seconds

Thermal Characteristics

Symbol

R

胃JC

R

胃JA

Parameter

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

FCP4N60

2.5

83

Unit

擄C/W

擄C/W

漏2007 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

FCP4N60 Rev. A

next

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