Ordering number :EN3908A
FC809
Silicon Barrier Diode
30V, 70mA Rectifier
Applications
路 General rectification applications.
路 High frequency rectification (switching regulators,
converters, choppers).
Package Dimensions
unit:mm
1236A
[FC809]
Features
路 Low forward voltage (VF max=0.55V) .
路 Fast reverse recovery time (trr max=10ns) .
路 Composite type with 2 diodes contained in the CP
package currently in use, saving the mounting
space greatly.
路 The FC809 is formed with two chips, each being
equivalent to the SB007-03CP, placed in one pack-
age.
1:Cathode
2:Cathode
3:Anode
4:No Contact
5:Anode
SANYO:CP5
Specifications
Absolute Maximum Ratings
at Ta = 25藲C (Value per element)
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
50Hz sine wave, 1 cycle
Conditions
Ratings
30
35
70
2
鈥?5 to +125
鈥?5 to +125
Unit
V
V
mA
A
藲C
藲C
Electrical Characteristics
at Ta = 25藲C (Value per element)
.Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interteminal Capacitance
Reverse Recovery Time
Thermal Resistance
Symbol
VR
VF
IR
C
trr
Rth (j-a)
IR=20碌A(chǔ)
IF=70mA
VR=15V
VR=10V, f=1MHz
IF=IR=10mA, See specified Test Circuit
560
3.0
10
Conditions
Ratings
min
30
0.55
5.0
typ
max
V
V
碌A(chǔ)
pF
ns
藲C/W
Unit
路 Marking:809
trr Test Circuit
Electrical Connection
1:Cathode
2:Cathode
3:Anode
4:No
Contact
5:Anode
(Top view)
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22898HA (KT)/90696GI/42294YH (KOTO) 8-7187 No.3908-1/2
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