TetraFET
D2006UK
METAL GATE RF SILICON FET
MECHANICAL DATA
A
K
B
(2
pls)
E
C
1
2
3
D
5
4
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
15W 鈥?28V 鈥?1GHz
PUSH鈥揚ULL
FEATURES
鈥?SIMPLIFIED AMPLIFIER DESIGN
G
(4
pls)
F
H
J
I
M
N
鈥?SUITABLE FOR BROAD BAND APPLICATIONS
鈥?VERY LOW C
rss
鈥?SIMPLE BIAS CIRCUITS
鈥?LOW NOISE
DK
PIN 1
PIN 3
PIN 5
SOURCE (COMMON) PIN 2
DRAIN 2
GATE 1
DIM
A
B
C
D
E
F
G
H
I
J
K
M
N
mm
6.45
1.65R
45擄
16.51
6.47
18.41
1.52
4.82
24.76
1.52
0.81R
0.13
2.16
Tol.
0.13
0.13
5擄
0.76
0.13
0.13
0.13
0.25
0.13
0.13
0.13
0.02
0.13
Inches
0.254
0.065R
45擄
0.650
0.255
0.725
0.060
0.190
0.975
0.060
0.032R
0.005
0.085
Tol.
0.005
0.005
5擄
0.03
0.005
0.005
0.005
0.010
0.005
0.005
0.005
0.001
0.005
PIN 4
DRAIN 1
GATE 2
鈥?HIGH GAIN 鈥?13 dB MINIMUM
APPLICATIONS
鈥?/div>
HF/VHF/UHF COMMUNICATIONS
from DC to 2 GHz
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25擄C unless otherwise stated)
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
* Per Side
Power Dissipation
Drain 鈥?Source Breakdown Voltage *
Gate 鈥?Source Breakdown Voltage *
Drain Current *
Storage Temperature
Maximum Operating Junction Temperature
70W
65V
鹵20V
3A
鈥?5 to 150擄C
200擄C
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 1/96
1
2
