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CY62138CV Datasheet

  • CY62138CV

  • Memory

  • 14頁(yè)

  • ETC

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38CV25/30/3
CY62138CV25/30/33 MoBL
廬
CY62138CV MoBL
廬
2M (256K x 8) Static RAM
Features
鈥?Very High Speed: 55 ns and 70 ns
鈥?Voltage range:
鈥?CY62138CV25: 2.2V鈥?.7V
鈥?CY62138CV30: 2.7V鈥?.3V
鈥?CY62138CV33: 3.0V鈥?.6V
鈥?CY62138CV: 2.7V鈥?.6V
鈥?Pin compatible with CY62138V
鈥?Ultra low active power
鈥?Typical active current: 1.5 mA @ f = 1 MHz
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?Typical active current: 7 mA @ f = f
max
(70 ns speed)
Low standby power
Easy memory expansion with CE
1
, CE
2
, and OE fea-
tures
Automatic power-down when deselected
CMOS for optimum speed/power
Packages offered in a 36-ball FBGA
This device features advanced circuit design to provide ul-
tra-low active current. This is ideal for providing More Battery
Life鈩?(MoBL
廬
) in portable applications. The device also has
an automatic power-down feature that significantly reduces
power consumption by 80% when addresses are not toggling.
The device can be put into standby mode reducing power con-
sumption by more than 99% when deselected (CE
1
HIGH or
CE
2
LOW).
Writing to the device is accomplished by taking Chip Enable 1
(CE
1
) and Write Enable (WE) inputs LOW and Chip Enable 2
(CE
2
) HIGH. Data on the eight I/O pins (I/O
0
through I/O
7
) is
then written into the location specified on the address pins (A
0
through A
17
).
Reading from the device is accomplished by taking Chip En-
able 1 (CE
1
) and Output Enable (OE) LOW while forcing Write
Enable (WE) and Chip Enable 2 (CE
2
) HIGH. Under these
conditions, the contents of the memory location specified by
the address pins will appear on the I/O pins.
The eight input/output pins (I/O
0
through I/O
7
) are placed in a
high-impedance state when the device is deselected (CE
1
HIGH or CE
2
LOW), the outputs are disabled (OE HIGH), or
during a write operation (CE
1
LOW, CE
2
HIGH and WE LOW).
See the truth table at the back of this data sheet for a complete
description of read and write modes.
Functional Description
[1]
The CY62138CV25/30/33 and CY62138CV are high-perfor-
mance CMOS static RAMs organized as 256K words by 8 bits.
Logic Block Diagram
Data in Drivers
I/O
0
I/O
1
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
A
10
A
11
CE
1
CE
2
WE
OE
ROW DECODER
SENSE AMPS
I/O
2
I/O
3
I/O
4
I/O
5
256K x 8
ARRAY
COLUMN
DECODER
POWER
DOWN
I/O
6
I/O
7
Note:
1. For best practice recommendations, please refer to the Cypress application note 鈥淪ystem Design Guidelines鈥?on http://www.cypress.com.
Cypress Semiconductor Corporation
Document #: 38-05200 Rev. *C
鈥?/div>
3901 North First Street
A
12
A
13
A
14
A
15
A
16
A
17
鈥?/div>
San Jose
鈥?/div>
CA 95134 鈥?408-943-2600
Revised August 23, 2002

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