MITSUBISHI Nch IGBT
CT60AM-18F
INSULATED GATE BIPOLAR TRANSISTOR
CT60AM-18F
OUTLINE DRAWING
20MAX.
Dimensions in mm
5
2
蠁3.2
6
1
2
1
聦
聧
聨
0.5
3
5.45 5.45
q
V
CES ...............................................................................
900V
q
I
C .........................................................................................
60A
q
Simple drive
q
Integrated Fast-recovery diode
q
Small tail loss
q
Low V
CE
Saturation Voltage
4.0
聧聫
聦
GATE
聧
COLLECTOR
聨
EMITTER
聫
COLLECTOR
聨
聦
TO-3PL
APPLICATION
Microwave oven, Electromagnetic cooking devices, Rice-cookers
MAXIMUM RATINGS
Symbol
V
CES
V
GES
V
GEM
I
C
I
CM
I
E
P
C
T
j
T
stg
(Tc = 25擄C)
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Peak Gate-Emitter Voltage
Collector Current
Collector Current (Pulse)
Emitter Current
Maximum Power Dissipation
Junction Temperature
Storage Temperature
V
GE
= 0V
Conditions
Ratings
900
鹵25
鹵30
60
120
40
180
鈥?0 ~ +150
鈥?0 ~ +150
20.6MIN.
2.5
26
聫
Unit
V
V
V
A
A
A
W
擄C
擄C
Sep. 2000
1
2
