SPICE MODEL: BS870
BS870
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
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Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free/RoHS Compliant (Note 2)
G
TOP VIEW
S
E
D
G
H
K
J
L
D
B
C
A
SOT-23
Dim
A
B
C
D
E
M
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
0擄
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
8擄
Mechanical Data
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Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Marking (See Page 2): K70
Ordering & Date Code Information: See Page 2
Weight: 0.008 grams (approximate)
G
H
J
K
L
M
a
Drain
Gate
All Dimensions in mm
Source
Maximum Ratings
Drain-Source Voltage
@ T
A
= 25擄C unless otherwise specified
Symbol
V
DSS
V
DGR
Continuous
Continuous
V
GSS
I
D
P
d
R
qJA
T
j
, T
STG
BS870
60
60
鹵20
250
300
417
-55 to +150
Units
V
V
V
mA
mW
K/W
擄C
Characteristic
Drain-Gate Voltage R
GS
攏
1.0MW
Gate-Source Voltage
Drain Current (Note 1)
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Note:
1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
DS11302 Rev. 11 - 2
1 of 4
www.diodes.com
BS870
茫
Diodes Incorporated
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