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SPICE MODEL: BS870

BS870

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT

TRANSISTOR

Features

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Low On-Resistance

Low Gate Threshold Voltage

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Lead Free/RoHS Compliant (Note 2)

G

TOP VIEW

S

E

D

G

H

K

J

L

D

B

C

A

SOT-23

Dim

A

B

C

D

E

M

Min

0.37

1.20

2.30

0.89

0.45

1.78

2.80

0.013

0.903

0.45

0.085

0擄

Max

0.51

1.40

2.50

1.03

0.60

2.05

3.00

0.10

1.10

0.61

0.180

8擄

Mechanical Data

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Case: SOT-23

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020C

Terminal Connections: See Diagram

Terminals: Solderable per MIL-STD-202, Method 208

Lead Free Plating (Matte Tin Finish annealed over Alloy 42

leadframe).

Marking (See Page 2): K70

Ordering & Date Code Information: See Page 2

Weight: 0.008 grams (approximate)

G

H

J

K

L

M

a

Drain

Gate

All Dimensions in mm

Source

Maximum Ratings

Drain-Source Voltage

@ T

A

= 25擄C unless otherwise specified

Symbol

V

DSS

V

DGR

Continuous

Continuous

V

GSS

I

D

P

d

R

qJA

T

j

, T

STG

BS870

60

60

鹵20

250

300

417

-55 to +150

Units

V

V

V

mA

mW

K/W

擄C

Characteristic

Drain-Gate Voltage R

GS

攏

1.0MW

Gate-Source Voltage

Drain Current (Note 1)

Total Power Dissipation (Note 1)

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

Note:

1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001,

which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. No purposefully added lead.

DS11302 Rev. 11 - 2

1 of 4

www.diodes.com

BS870

茫

Diodes Incorporated

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