BS108G Datasheet

IC型號(hào)：
BS108G
PDF描述：
ON Semiconductor [Small Signal MOSFET 250 mAmps, 200 Volts,...
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芯片廠家：
ONSEMI

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BS108

Preferred Device

Small Signal MOSFET

250 mAmps, 200 Volts,

Logic Level

N鈭扖hannel TO鈭?2

This MOSFET is designed for high voltage, high speed switching

applications such as line drivers, relay drivers, CMOS logic,

microprocessor or TTL to high voltage interface and high voltage

display drivers.

Features

http://onsemi.com

250 mAMPS

200 VOLTS

DS(on)

= 8

N鈭扖hannel

鈥?/div>

Low Drive Requirement, V

= 3.0 V max

鈥?/div>

Inherent Current Sharing Capability Permits Easy Paralleling of

many Devices

鈥?/div>

Pb鈭扚ree Packages are Available*

MAXIMUM RATINGS

Rating

Drain 鈭扴ource Voltage

Gate鈭扴ource Voltage

Drain Current

Continuous (Note 1)

Pulsed (Note 2)

Total Power Dissipation

@ T

= 25擄C

Derate above T

= 25擄C

Operating and Storage Temperature Range

Symbol

DSS

350

6.4

, T

stg

鈭?5 to +150

mW/擄C

擄C

Value

200

鹵20

250

500

BS108

AYWW

Unit

Vdc

mAdc

MARKING

DIAGRAM

TO鈭?2

CASE 29鈭?1

STYLE 30

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. The Power Dissipation of the package may result in a lower continuous drain

current.

2. Pulse Test: Pulse Width

300

ms,

Duty Cycle

2.0%.

BS108 = Device Code

= Assembly Location

= Year

= Work Week

= Pb鈭扚ree Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

Device

BS108

BS108G

BS108ZL1

BS108ZL1G

Package

TO鈭?2

(Pb鈭扚ree)

TO鈭?2

(Pb鈭扚ree)

Shipping

1000 Units/Box

2000/Ammo Pack

*For additional information on our Pb鈭扚ree strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Preferred

devices are recommended choices for future use

and best overall value.

漏

Semiconductor Components Industries, LLC, 2006

February, 2006 鈭?Rev. 2

Publication Order Number:

BS108/D

標(biāo)準(zhǔn)包裝
1,000
類別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 單
系列
-
FET 型
MOSFET N 通道，金屬氧化物
FET 特點(diǎn)
邏輯電平門
漏極至源極電壓(Vdss)
200V
電流 - 連續(xù)漏極(Id) @ 25° C
250mA
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
8 歐姆 @ 100mA，2.8V
Id 時(shí)的 Vgs(th)（最大）
1.5V @ 1mA
閘電荷(Qg) @ Vgs
-
輸入電容 (Ciss) @ Vds
150pF @ 25V
功率 - 最大
350mW
安裝類型
通孔
封裝/外殼
TO-226-3、TO-92-3 標(biāo)準(zhǔn)主體
供應(yīng)商設(shè)備封裝
TO-92-3
包裝
管件

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