鈥?/div>
10
nAdc
Vdc
nAdc
ON CHARACTERISTICS(2)
Gate Threshold Voltage (ID = 1.0 mAdc, VDS = VGS)
Static Drain鈥揝ource On Resistance
BS107 (VGS = 2.6 Vdc, ID = 20 mAdc)
(VGS = 10 Vdc, ID = 200 mAdc)
BS107A (VGS = 10 Vdc)
(ID = 100 mAdc)
(ID = 250 mAdc)
1.0
鈥?/div>
3.0
Vdc
Ohms
SMALL鈥?SIGNAL CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Forward Transconductance
(VDS = 25 Vdc, ID = 250 mAdc)
Ciss
Crss
Coss
gfs
鈥?/div>
鈥?/div>
鈥?/div>
200
60
6.0
30
400
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
pF
pF
pF
mmhos
SWITCHING CHARACTERISTICS
Turn鈥揙n Time
Turn鈥揙ff Time
ton
toff
鈥?/div>
鈥?/div>
6.0
12
15
15
ns
ns
1. The Power Dissipation of the package may result in a lower continuous drain current.
2. Pulse Test: Pulse Width
300
碌s,
Duty Cycle
2.0%.
v
v
REV 1
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1997
1
BS107 產(chǎn)品屬性
ON Semiconductor
MOSFET
N-Channel
200 V
+/- 20 V
250 mA
14 Ohms
Single
+ 150 C
Through Hole
TO-92
Bulk
0.0004 S
- 55 C
0.35 W
1000
BS107相關(guān)型號(hào)PDF文件下載
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型號(hào)
版本
描述
廠商
下載
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英文版
SIPMOS Small-Signal Transistor
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英文版
N-Channel Enhancement-Mode MOS Transistors
TEMIC
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英文版
Small Signal MOSFET 250 mAmps, 200 Volts
ONSEMI
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英文版
TMOS Switching(N-Channel-Enhancement)
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英文版
N-Channel 200-V (D-S) MOSFETs
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英文版
N-CHANNEL ENHANCEMENT MODE TRANSISTOR
DIODES
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英文版
N-channel enhancement mode vertical D-MOS transistor
PHILIPS
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TMOS Switching(N-Channel-Enhancement)
MOTOROLA [...
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N-channel enhancement mode vertical D-MOS transistor
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N-CHANNEL ENHANCEMENT MODE TRANSISTOR
DIODES [Di...
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英文版
N-Channel 200-V (D-S) MOSFETs
VISAY [Vis...
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英文版
DMOS Transistors (N-Channel)
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N-channel enhancement mode vertical D-MOS transistor
PHILIPS
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英文版
200 VOLTS N-CHANNEL TMOS POWER FET LOGIC LEVEL
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英文版
Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level
ONSEMI
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英文版
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PHILIPS [P...
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