鈥?/div>
Individual byte write and global write
Clock enable for operation hold
Multiple chip enables for easy expansion
2.5V core power supply
Self-timed write cycles
Interleaved or linear burst modes
Snooze mode for standby operation
Logic block diagram
A[18:0]
19
D
Address
register
Burst logic
Q
19
CLK
CE0
CE1
CE2
R/W
BWa
BWb
BWc
BWd
ADV / LD
LBO
ZZ
D
Q
19
Write delay
addr. registers
CLK
Control
logic
CLK
Write Buffer
CLK
512K x 32/36
SRAM
Array
DQ[a,b,c,d]
32/36
D
Data
Q
Input
Register
CLK
32/36
32/36
32/36
32/36
CLK
CEN
CLK
OE
Output
Register
32/36
OE
DQ[a,b,c,d]
Selection guide
-166
Minimum cycle time
Maximum clock frequency
Maximum clock access time
Maximum operating current
Maximum standby current
Maximum CMOS standby current (DC)
6
166
3.5
290
85
40
-133
7.5
133
3.8
270
75
40
Units
ns
MHz
ns
mA
mA
mA
12/23/04, v 2.2
Alliance Semiconductor
P. 1 of 18
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