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August 2000

AS7C513

AS7C3513

5V/3.3V 32K脳16 CMOS SRAM

AS7C513 (5V version)

AS7C3513 (3.3V version)

Industrial and commercial temperature

Organization: 32,768 words 脳 16 bits

Center power and ground pins

High speed

- 12/15/20 ns address access time

- 5/7/9 ns output enable access time

鈥?Low power consumption: ACTIVE

- 800 mW (AS7C513) / max @ 12 ns

- 432 mW (AS7C3513) / max @ 12 ns

鈥?/div>

鈥?Low power consumption: STANDBY

- 28 mW (AS7C513) / max CMOS

- 18 mW (AS7C3513) / max CMOS

鈥?2.0V data retention

鈥?Easy memory expansion with CE, OE inputs

鈥?TTL-compatible, three-state I/O

鈥?44-pin JEDEC standard package

- 400 mil SOJ

- 400 mil TSOP II

鈥?ESD protection

鈮?/div>

2000 volts

鈥?Latch-up current

鈮?/div>

200 mA

A0

Row decoder

A1

A2

A3

A4

A5

A6

A7

I/O0鈥揑/O7

I/O8鈥揑/O15

V

CC

44-Pin SOJ, TSOP II (400 mil)

NC

A3

A2

A1

A0

CE

I/O0

I/O1

I/O2

I/O3

V

CC

GND

I/O4

I/O5

I/O6

I/O7

WE

A14

A13

A12

A11

NC

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19

20

21

22

44

43

42

41

40

39

38

37

36

35

34

33

32

31

30

29

28

27

26

25

24

23

A4

A5

A6

OE

UB

LB

I/O15

I/O14

I/O13

I/O12

GND

V

CC

I/O11

I/O10

I/O9

I/O8

NC

A7

A8

A9

A10

NC

32K 脳 16

Array

GND

Control circuit

Column decoder

A8

A9

A10

A11

A12

A13

A14

WE

UB

OE

LB

CE

AS7C513-12

AS7C3513-12

Maximum address access time

Maximum output enable access time

Maximum operating current

Maximum CMOS standby current

Shaded areas indicate advance information.

AS7C513-15

AS7C3513-15

15

7

150

110

5

AS7C513

AS7C3513

I/O

buffer

AS7C513-20

AS7C3513-20

20

9

140

100

5

Unit

ns

mA

12

5

AS7C513

AS7C3513

AS7C513

AS7C3513

160

120

5

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