ACT-D1M96S High Speed
96 MegaBit 3.3V Synchronous DRAM
Multichip Module
Features
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6 Low Power Micron 1M X 16 Synchronous Dynamic
Random Access Memory Chips in one MCM
User Configureable as "2" Independent 512K X 48 X 2
Banks
High-Speed, Low-Noise, Low-Voltage TTL (LVTTL)
Interface
3.3-V Power Supply (
鹵
10% Tolerance)
Separate Logic and Output Driver Power Pins
Two Banks for On-Chip Interleaving (Gapless
Accesses)
Up to 50-MHz Data Rates
CAS Latency (CL) Programmable to 2 Cycles From
Column-Address Entry
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Burst Length Programmable to 4 or 8
Pipeline Architecture
Cycle-by-Cycle DQ-Bus Write Mask Capability With
Upper and Lower Byte Control
Chip Select and Clock Enable for Enhanced-System
Interfacing
Serial Burst Sequence
Auto-Refresh
4K Refresh (Total for Both Banks)
200-lead CQFP, cavity-up package
General Description
The ACT-D1M96S device is a high-speed 96Mbit synchronous dynamic random access memory (SDRAM)
organized as 2 independent 512K X 48 X 2 banks. All inputs and outputs of the ACT-D1M96S are compatible
with the LVTTL interface. All inputs and outputs are synchronized with the CLK input to simplify system design
and enhance use with high-speed microprocessors and caches.
BLOCK DIAGRAM
CS1
CLK1
CKE1
DQMU1
DQML1
RAS1
CAS1
WE1
A0-A11
B
ANK
T
B
ANK
B
16
16
16
S
E
C
T
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N
A
12
1M X 16 or
512K X 16 X 2 Banks
1M X 16 or
512K X 16 X 2 Banks
1M X 16 or
512K X 16 X 2 Banks
DQ
0-15
CS2
CLK2
CKE2
DQMU2
DQML2
RAS2
CAS2
WE2
BA0-BA11
B
ANK
T
B
ANK
B
16
DQ
16-31
DQ
32-47
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C
T
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B
12
1M X 16 or
512K X 16 X 2 Banks
1M X 16 or
512K X 16 X 2 Banks
16
1M X 16 or
512K X 16 X 2 Banks
16
DQ
48-63
DQ
64-79
DQ
80-95
eroflex Circuit Technology - Advanced Multichip Modules 漏 SCD3369-1 REV C 5/31/00