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ACT-SF41632 High Speed

128Kx32 SRAM / 512Kx32 Flash

Multichip Module

CIRCUIT TECHNOLOGY

FEATURES

4 鈥?128K x 8 SRAMs & 4 鈥?512K x 8 Flash Die in

One MCM

s

Access Times of 25ns, 35ns (SRAM) and

60ns, 70ns, 90ns (Flash)

s

Organized as 128K x 32 of SRAM and 512K x 32

of Flash Memory with Common Data Bus

s

Low Power CMOS

s

Input and Output TTL Compatible Design

s

MIL-PRF-38534 Compliant MCMs Available

s

Decoupling Capacitors and Multiple Grounds for

Low Noise

s

Commercial, Industrial and Military Temperature

Ranges

s

Industry Standard Pinouts

s

TTL Compatible Inputs and Outputs

s

Packaging 鈥?Hermetic Ceramic

q

66鈥揕ead, PGA-Type, 1.385"SQ x 0.245"max,

Aeroflex code# "P1,P5 with/without shoulders)"

q

68鈥揕ead, Dual-Cavity CQFP(F2), 0.88"SQ x

.20"max (.18 max thickness available, contact

factory for details)

(Drops into the 68 Lead

JEDEC .99"SQ CQFJ footprint)

s

s

www.aeroflex.com

FLASH MEMORY FEATURES

Sector Architecture (Each Die)

q

8 Equal Sectors of 64K bytes each

q

Any combination of sectors can be erased with

one command sequence.

s

+5V Programing, +5V Supply

s

Embedded Erase and Program Algorithms

s

Hardware and Software Write Protection

s

Page Program Operation and Internal Program

Control Time.

s

10,000 Erase/Program Cycles

A E

RO

F

LE

X

LA

B

S

I

NC

.

C

ISO

9001

E

RT

I

F

I

E

D

Block Diagram 鈥?PGA Type Package(P1 & P5) & CQFP(F2)

FWE

1

SWE

1

OE

A

0

鈥揂

18

SCE

FCE

FWE

2

SWE

2

FWE

3

SWE

3

FWE

4

SWE

4

PIN DESCRIPTION

I/O

0-31

A

0鈥?8

FWE

1-4

Data I/O

Address Inputs

Flash Write Enables

SWE

1-4

SRAM Write Enables

512K

X

8 F

LASH

128K

X

8 SRAM

512K

X

8 F

LASH

128K

X

8 SRAM

512K

X

8 F

LASH

128K

X

8 SRAM

512K

X

8 F

LASH

128K

X

8 SRAM

FCE

SCE

OE

NC

V

CC

GND

Flash Chip Enable

SRAM Chip Enable

Output Enable

Not Connected

Power Supply

Ground

I/O

0-7

I/O

8-15

I/O

16-23

I/O

24-31

eroflex Circuit Technology - Advanced Multichip Modules 漏 SCD3851 REV A 5/21/98

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