ACT-PS512K8 High Speed
4 Megabit Plastic Monolithic SRAM
Plastic Path鈩?Features
Low Power Monolithic CMOS 512K x 8 SRAM
s
Operating Temperature Range
q
Full Military (-55擄C to +125擄C)
q
Industrial (-40擄C to +85擄C)
s
Burn-in and Temperature Cycle Available
s
10, 12, 15, 17, 20 & 25ns Access Times
s
+5V Power Supply
s
Industry Standard Pinouts
q
Center Power / Ground Pins
s
TTL Compatible I/O
s
3.3V Device I/O Interfacing
s
JEDEC Standard 36 pin Plastic SOJ Package
q
36 Lead, .93" x .405" x 0.148 Small Outline J lead (SOJ),
Aeroflex code# "L2"
s
Fully Static Operation
q
No Clocks or Refresh Required
s
CIRCUIT TECHNOLOGY
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A E
RO
F
LE
X
LA
C
ISO
9001
E
RT
I
F
I
E
D
Block Diagram 鈥?SOJ (L2)
CE
WE
OE
A
0
鈥?A
18
V
ss
V
cc
512Kx8
8
General Description
The ACT-PS512K8 is a
Plastic High Speed, 4 Megabit
(4,194,304
bits)
CMOS
Monolithic SRAM organized as
524,288 words by 8 bits.
Designed for high-speed, high
density, high reliablility, mass
memory and fast cache system
applications.
The plastic monolithic is
input
and
output
TTL
compatible. Writing is executed
when the write enable (WE)
and chip enable (CE) inputs are
low. Reading is accomplished
when WE is high and CE and
output enable (OE) are both
low. Access time grades of
10ns 12ns, 15ns, 17ns, 20ns
and 25ns are standard.
B
S
I
NC
.
I/O
0-7
Pin Description
I/O
0-7
A
0鈥?8
WE
CE
OE
V
CC
V
SS
NC
Data I/O
Address Inputs
Write Enable
Chip Enable
Output Enable
Power Supply
Ground
Not Connected
eroflex Circuit Technology - Advanced Multichip Modules 漏 SCD3764 REV A 6/2/98