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50MT060WHT Datasheet

  • 50MT060WHT

  • HALF-BRIDGE IGBT MTP

  • 7頁(yè)

  • IRF

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I27120 rev. D 02/03
50MT060WH
"HALF-BRIDGE" IGBT MTP
Warp Speed IGBT
Features
鈥?Gen. 4 Warp Speed IGBT Technology
鈥?HEXFRED
TM
Antiparallel Diodes with
UltraSoft Reverse Recovery
鈥?Very Low Conduction and Switching Losses
鈥?Optional SMT Thermistor (NTC)
鈥?Aluminum Nitride DBC
鈥?Very Low Stray Inductance Design for
High Speed Operation
鈥?/div>
UL E78996 approved
V
CES
= 600V
V
CE(on) typ.
= 2.3V @
V
GE
= 15V, I
C
= 50A
T
C
= 25擄C
Benefits
鈥?Optimized for Welding, UPS and SMPS
Applications
鈥?Operating Frequencies > 20 kHz Hard
Switching,>200 kHz Resonant Mode
鈥?Low EMI, requires Less Snubbing
鈥?Direct Mounting to Heatsink
鈥?PCB Solderable Terminals
鈥?Very Low Junction-to-Case Thermal
Resistance
MMTP
Absolute Maximum Ratings
Parameters
V
CES
I
C
I
CM
I
LM
I
F
Max
600
@ T
C
= 25擄C
@ T
C
= 109擄C
114
50
350
350
@ T
C
= 109擄C
34
200
鹵 20
2500
658
263
@ T
C
= 25擄C
@ T
C
= 100擄C
Units
V
A
Collector-to-Emitter Voltage
Continuos Collector Current
Pulsed Collector Current
Peak Switching Current
Diode Continuous Forward Current
Peak Diode Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
Maximum Power Dissipation
I
FM
V
GE
V
ISOL
P
D
V
W
www.irf.com
1

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