Bulletin I27191 02/05
50MT060ULSA
50MT060ULSTA
"LOW SIDE CHOPPER" IGBT MTP
Features
鈥?Gen. 4 Ultrafast Speed IGBT Technology
鈥?HEXFRED
TM
Diode with UltraSoft
Reverse Recovery
鈥?Very Low Conduction and Switching
Losses
鈥?Optional SMD Thermistor (NTC)
鈥?Al
2
O
3
DBC
鈥?Very Low Stray Inductance Design for
High Speed Operation
鈥?UL approved ( file E78996 )
Ultrafast Speed IGBT
V
CES
= 600V
I
C
= 100A,
T
C
= 25擄C
Benefits
鈥?Optimized for Welding, UPS and SMPS
Applications
鈥?Operating Frequencies > 20 kHz Hard
Switching, >200 kHz Resonant Mode
鈥?Low EMI, requires Less Snubbing
鈥?Direct Mounting to Heatsink
鈥?PCB Solderable Terminals
鈥?Very Low Junction-to-Case Thermal
Resistance
MMTP
Absolute Maximum Ratings
Parameters
V
CES
I
C
I
CM
I
LM
I
F
Max
600
@ T
C
= 25擄C
@ T
C
= 122擄C
100
50
200
200
@ T
C
= 100擄C
48
200
鹵 20
2500
445
175
205
83
IGBT
Diode
@ T
C
= 25擄C
@ T
C
= 100擄C
@ T
C
= 25擄C
@ T
C
= 100擄C
Units
V
A
Collector-to-Emitter Voltage
Continuos Collector Current
Pulsed Collector Current
Peak Switching Current
Diode Continuous Forward Current
Peak Diode Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
Maximum Power
Dissipation
I
FM
V
GE
V
ISOL
P
D
V
W
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