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SEMICONDUCTOR

TECHNICAL DATA

GENERAL PURPOSE APPLICATION.

HIGH VOLTAGE APPLICATION.

B

2N5400

EPITAXIAL PLANAR PNP TRANSISTOR

C

High Collector Breakdwon Voltage

: V

CBO

=-130V, V

CEO

=-120V

Low Leakage Current.

: I

CBO

=-100nA(Max.) @V

CB

=-100V

Low Saturation Voltage

: V

CE(sat)

=-0.5V(Max.) @I

C

=-50mA, I

B

=-5mA

Low Noise : NF=8dB (Max.)

F

H

A

FEATURES

N

K

D

E

G

F

L

1

2

3

MAXIMUM RATING (Ta=25

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Base Current

Collector Power Dissipation

(Ta=25

(Tc=25

)

)

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

)

SYMBOL

V

CBO

V

CEO

V

EBO

I

C

I

B

P

C

P

C

T

j

T

stg

RATING

-130

-120

-5

-600

-100

625

1.5

150

-55

150

UNIT

V

V

V

mA

mA

mW

W

M

C

DIM

A

B

C

D

E

F

G

H

J

K

L

M

N

MILLIMETERS

4.70 MAX

4.80 MAX

3.70 MAX

0.45

1.00

1.27

0.85

0.45

_

14.00 + 0.50

0.55 MAX

2.30

0.45 MAX

1.00

J

1. EMITTER

2. BASE

3. COLLECTOR

TO-92

1997. 5. 13

Revision No : 0

1/2

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