鈥?/div>
20
mAdc
SMALL鈥揝IGNAL CHARACTERISTICS
Forward Transfer Admittance
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
Input Admittance
(VDS = 15 Vdc, VGS = 0, f = 400 MHz)
Output Admittance
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
Output Conductance
(VDS = 15 Vdc, VGS = 0, f = 400 MHz)
Forward Transconductance
(VDS = 15 Vdc, VGS = 0, f = 400 MHz)
錚磞
fs
錚?/div>
4000
Re(yis)
鈥?/div>
錚磞
os
錚?/div>
鈥?/div>
Re(yos)
鈥?/div>
Re(yfs)
3500
鈥?/div>
鈥?/div>
鈥?/div>
100
mmhos
鈥?/div>
75
mmhos
鈥?/div>
1000
mmhos
鈥?/div>
8000
mmhos
mmhos
漏
Semiconductor Components Industries, LLC, 2001
1
May, 2001 鈥?Rev. 0
Publication Order Number:
2N5486/D
2N5486 產(chǎn)品屬性
1,000
分離式半導體產(chǎn)品
RF FET
-
N 通道 JFET
-
-
-
30mA
-
-
-
25V
TO-226-3、TO-92-3 標準主體
TO-92-3
散裝
2N5486OS
2N5486相關型號PDF文件下載
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型號
版本
描述
廠商
下載
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英文版
TRANSISTOR | BJT | PNP | 3.5A I(C) | STR-8
ETC
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英文版
TRANSISTOR | BJT | PNP | 3.5A I(C) | STR-8
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英文版
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 25MA I(C) | TO-5
ETC
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英文版
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 25MA I(C) | TO-5
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英文版
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 25MA I(C) | TO-5
ETC
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英文版
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 25MA I(C) | TO-5
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英文版
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 25MA I(C) | TO-5
ETC
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英文版
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 25MA I(C) | TO-5
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英文版
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 800MA I(C) | TO-5
ETC
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英文版
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 800MA I(C) | TO-5
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英文版
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 800MA I(C) | TO-5
ETC
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英文版
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 800MA I(C) | TO-5
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英文版
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 800MA I(C) | TO-5
ETC
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英文版
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 800MA I(C) | TO-5
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英文版
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 800MA I(C) | TO-5
ETC
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英文版
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 800MA I(C) | TO-5
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英文版
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 800MA I(C) | TO-5
ETC
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英文版
PNP Silicon Expitaxial Planar Transistor for general purpose...
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英文版
Amplifier Transistor(PNP Silicon)
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英文版
PNP EPITAXIAL SILICON TRANSISTOR
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