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2N5486/D Datasheet

  • 2N5486/D

  • JFET VHF/UHF Amplifiers

  • 8頁

  • ETC

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ON Semiconductort
JFET VHF/UHF Amplifiers
N鈥揅hannel 鈥?Depletion
3
GATE
1 DRAIN
2N5486
2 SOURCE
MAXIMUM RATINGS
Rating
Drain鈥揋ate Voltage
Reverse Gate鈥揝ource Voltage
Drain Current
Forward Gate Current
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
VDG
VGSR
ID
IG(f)
PD
TJ, Tstg
Value
25
25
30
10
350
2.8
鈥?5 to +150
Unit
Vdc
Vdc
mAdc
mAdc
mW
mW/擄C
擄C
1
2
3
CASE 29鈥?1, STYLE 5
TO鈥?2 (TO鈥?26AA)
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Gate鈥揝ource Breakdown Voltage
(IG = 鈥?.0
碌A(chǔ)dc,
VDS = 0)
Gate Reverse Current
(VGS = 鈥?0 Vdc, VDS = 0)
(VGS = 鈥?0 Vdc, VDS = 0, TA = 100擄C)
Gate Source Cutoff Voltage
(VDS = 15 Vdc, ID = 10 nAdc)
V(BR)GSS
IGSS
鈥?/div>
鈥?/div>
VGS(off)
鈥?.0
鈥?/div>
鈥?.0
鈥?/div>
鈥?/div>
鈥?.0
鈥?.2
nAdc
碌A(chǔ)dc
Vdc
鈥?5
鈥?/div>
鈥?/div>
Vdc
ON CHARACTERISTICS
Zero鈥揋ate鈥揤oltage Drain Current
(VDS = 15 Vdc, VGS = 0)
IDSS
8.0
鈥?/div>
20
mAdc
SMALL鈥揝IGNAL CHARACTERISTICS
Forward Transfer Admittance
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
Input Admittance
(VDS = 15 Vdc, VGS = 0, f = 400 MHz)
Output Admittance
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
Output Conductance
(VDS = 15 Vdc, VGS = 0, f = 400 MHz)
Forward Transconductance
(VDS = 15 Vdc, VGS = 0, f = 400 MHz)
錚磞
fs
錚?/div>
4000
Re(yis)
鈥?/div>
錚磞
os
錚?/div>
鈥?/div>
Re(yos)
鈥?/div>
Re(yfs)
3500
鈥?/div>
鈥?/div>
鈥?/div>
100
mmhos
鈥?/div>
75
mmhos
鈥?/div>
1000
mmhos
鈥?/div>
8000
mmhos
mmhos
漏
Semiconductor Components Industries, LLC, 2001
1
May, 2001 鈥?Rev. 0
Publication Order Number:
2N5486/D

2N5486/D相關(guān)型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    TRANSISTOR | BJT | PNP | 3.5A I(C) | STR-8
    ETC
  • 英文版
    TRANSISTOR | BJT | PNP | 3.5A I(C) | STR-8
  • 英文版
    TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 25MA I(C) | TO-5
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 25MA I(C) | TO-5
  • 英文版
    TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 25MA I(C) | TO-5
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 25MA I(C) | TO-5
  • 英文版
    TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 25MA I(C) | TO-5
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 25MA I(C) | TO-5
  • 英文版
    TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 800MA I(C) | TO-5
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 800MA I(C) | TO-5
  • 英文版
    TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 800MA I(C) | TO-5
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 800MA I(C) | TO-5
  • 英文版
    TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 800MA I(C) | TO-5
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 800MA I(C) | TO-5
  • 英文版
    TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 800MA I(C) | TO-5
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 800MA I(C) | TO-5
  • 英文版
    TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 800MA I(C) | TO-5
    ETC
  • 英文版
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    SEMTECH
  • 英文版
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  • 英文版
    PNP EPITAXIAL SILICON TRANSISTOR
    SAMSUNG

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