ON Semiconductort
2 DRAIN
JFET Amplifiers
P鈥揅hannel 鈥?Depletion
MAXIMUM RATINGS
Rating
Drain鈥揋ate Voltage
Reverse Gate鈥揝ource Voltage
Forward Gate Current
Total Device Dissipation @ TA = 25擄C
Derate above 25擄C
Junction Temperature Range
Storage Channel Temperature Range
Symbol
VDG
VGSR
IG(f)
PD
TJ
Tstg
3
GATE
1 SOURCE
2N5460
2N5461
2N5462
Value
40
40
10
350
2.8
鈥?5 to +135
鈥?5 to +150
Unit
Vdc
Vdc
mAdc
mW
mW/擄C
擄C
擄C
1
2
3
CASE 29鈥?1, STYLE 7
TO鈥?2 (TO鈥?26AA)
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Gate鈥揝ource Breakdown Voltage
(IG = 10
碌A(chǔ)dc,
VDS = 0)
Gate Reverse Current
(VGS = 20 Vdc, VDS = 0)
(VGS = 30 Vdc, VDS = 0)
(VGS = 20 Vdc, VDS = 0, TA = 100擄C)
(VGS = 30 Vdc, VDS = 0, TA = 100擄C)
Gate鈥揝ource Cutoff Voltage
(VDS = 15 Vdc, ID = 1.0
碌A(chǔ)dc)
Gate鈥揝ource Voltage
(VDS = 15 Vdc, ID = 0.1 mAdc)
(VDS = 15 Vdc, ID = 0.2 mAdc)
(VDS = 15 Vdc, ID = 0.4 mAdc)
V(BR)GSS
2N5460, 2N5461, 2N5462
IGSS
2N5460, 2N5461, 2N5462
2N5460, 2N5461, 2N5462
2N5460
2N5461
2N5462
2N5460
2N5461
2N5462
VGS(off)
鈥?/div>
鈥?/div>
0.75
1.0
1.8
0.5
0.8
1.5
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
5.0
1.0
6.0
7.5
9.0
4.0
4.5
6.0
nAdc
碌A(chǔ)dc
Vdc
40
鈥?/div>
鈥?/div>
Vdc
VGS
Vdc
漏
Semiconductor Components Industries, LLC, 2001
1
November, 2001 鈥?Rev. 3
Publication Order Number:
2N5460/D
2N5461相關(guān)型號(hào)PDF文件下載
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型號(hào)
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描述
廠商
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