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2N5460/D Datasheet

  • 2N5460/D

  • JFET Amplifier P-Channel

  • 4頁

  • ETC

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ON Semiconductort
JFET Amplifiers
P鈥揅hannel 鈥?Depletion
3
GATE
2 DRAIN
2N5460
2N5461
2N5462
MAXIMUM RATINGS
Rating
Drain鈥揋ate Voltage
Reverse Gate鈥揝ource Voltage
Forward Gate Current
Total Device Dissipation @ T
A
= 25擄C
Derate above 25擄C
Junction Temperature Range
Storage Channel Temperature Range
Symbol
V
DG
V
GSR
I
G(f)
P
D
T
J
T
stg
Value
40
40
10
350
2.8
鈥?5 to +135
鈥?5 to +150
1 SOURCE
Unit
Vdc
Vdc
mAdc
mW
mW/擄C
擄C
擄C
1
2
3
CASE 29鈥?1, STYLE 7
TO鈥?2 (TO鈥?26AA)
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Gate鈥揝ource Breakdown Voltage
(I
G
= 10
碌A(chǔ)dc,
V
DS
= 0)
Gate Reverse Current
(V
GS
= 20 Vdc, V
DS
= 0)
(V
GS
= 30 Vdc, V
DS
= 0)
(V
GS
= 20 Vdc, V
DS
= 0, T
A
= 100擄C)
(V
GS
= 30 Vdc, V
DS
= 0, T
A
= 100擄C)
Gate鈥揝ource Cutoff Voltage
(V
DS
= 15 Vdc, I
D
= 1.0
碌A(chǔ)dc)
Gate鈥揝ource Voltage
(V
DS
= 15 Vdc, I
D
= 0.1 mAdc)
(V
DS
= 15 Vdc, I
D
= 0.2 mAdc)
(V
DS
= 15 Vdc, I
D
= 0.4 mAdc)
V
(BR)GSS
2N5460, 2N5461, 2N5462
I
GSS
2N5460, 2N5461, 2N5462
2N5460, 2N5461, 2N5462
2N5460
2N5461
2N5462
2N5460
2N5461
2N5462
V
GS(off)
鈥?/div>
鈥?/div>
0.75
1.0
1.8
0.5
0.8
1.5
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
5.0
1.0
6.0
7.5
9.0
4.0
4.5
6.0
nAdc
碌A(chǔ)dc
Vdc
40
鈥?/div>
鈥?/div>
Vdc
V
GS
Vdc
ON CHARACTERISTICS
Zero鈥揋ate鈥揤oltage Drain Current
(V
DS
= 15 Vdc, V
GS
= 0, f = 1.0 kHz)
2N5460
2N5461
2N5462
I
DSS
鈥?.0
鈥?.0
鈥?.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?.0
鈥?.0
鈥?6
mAdc
SMALL鈥揝IGNAL CHARACTERISTICS
Forward Transfer Admittance
(V
DS
= 15 Vdc, V
GS
= 0, f = 1.0 kHz)
2N5460
2N5461
2N5462
錚磞
fs
錚?/div>
1000
1500
2000
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
5.0
1.0
4000
5000
6000
75
7.0
2.0
mmhos
Output Admittance (V
DS
= 15 Vdc, V
GS
= 0, f = 1.0 kHz)
Input Capacitance (V
DS
= 15 Vdc, V
GS
= 0, f = 1.0 MHz)
Reverse Transfer Capacitance (V
DS
= 15 Vdc, V
GS
= 0, f = 1.0 MHz)
錚磞
os
錚?/div>
C
iss
C
rss
mmhos
pF
pF
FUNCTIONAL CHARACTERISTICS
Noise Figure
(V
DS
= 15 Vdc, V
GS
= 0, R
G
= 1.0 Megohm, f = 100 Hz, BW = 1.0 Hz)
Equivalent Short鈥揅ircuit Input Noise Voltage
(V
DS
= 15 Vdc, V
GS
= 0, f = 100 Hz, BW = 1.0 Hz)
漏
Semiconductor Components Industries, LLC, 2001
NF
e
n
鈥?/div>
鈥?/div>
1.0
60
2.5
115
dB
nV
Hz
1
May, 2001 鈥?Rev. 2
Publication Order Number:
2N5460/D

2N5460/D相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    TRANSISTOR | BJT | PNP | 3.5A I(C) | STR-8
    ETC
  • 英文版
    TRANSISTOR | BJT | PNP | 3.5A I(C) | STR-8
  • 英文版
    TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 25MA I(C) | TO-5
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 25MA I(C) | TO-5
  • 英文版
    TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 25MA I(C) | TO-5
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 25MA I(C) | TO-5
  • 英文版
    TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 25MA I(C) | TO-5
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 25MA I(C) | TO-5
  • 英文版
    TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 800MA I(C) | TO-5
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 800MA I(C) | TO-5
  • 英文版
    TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 800MA I(C) | TO-5
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 800MA I(C) | TO-5
  • 英文版
    TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 800MA I(C) | TO-5
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 800MA I(C) | TO-5
  • 英文版
    TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 800MA I(C) | TO-5
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 800MA I(C) | TO-5
  • 英文版
    TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 800MA I(C) | TO-5
    ETC
  • 英文版
    PNP Silicon Expitaxial Planar Transistor for general purpose...
    SEMTECH
  • 英文版
    Amplifier Transistor(PNP Silicon)
    MOTOROLA
  • 英文版
    PNP EPITAXIAL SILICON TRANSISTOR
    SAMSUNG

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