ON Semiconductort
JFETs
General Purpose
N鈥揅hannel 鈥?Depletion
MAXIMUM RATINGS
Rating
Drain鈥揝ource Voltage
Drain鈥揋ate Voltage
Reverse Gate鈥揝ource Voltage
Gate Current
Total Device Dissipation @ T
A
= 25擄C
Derate above 25擄C
Junction Temperature Range
Storage Channel Temperature Range
Symbol
V
DS
V
DG
V
GSR
I
G
P
D
T
J
T
stg
Value
25
25
鈥?5
10
310
2.82
125
鈥?5 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/擄C
擄C
擄C
2N5457
*ON Semiconductor Preferred Device
1
2
3
CASE 29鈥?1, STYLE 5
TO鈥?2 (TO鈥?26AA)
1 DRAIN
3
GATE
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Typ
2 SOURCE
Max
Unit
OFF CHARACTERISTICS
Gate鈥揝ource Breakdown Voltage
(I
G
= 鈥?0
碌Adc,
V
DS
= 0)
Gate Reverse Current
(V
GS
= 鈥?5 Vdc, V
DS
= 0)
(V
GS
= 鈥?5 Vdc, V
DS
= 0, T
A
= 100擄C)
Gate鈥揝ource Cutoff Voltage
(V
DS
= 15 Vdc, I
D
= 10 nAdc)
Gate鈥揝ource Voltage
(V
DS
= 15 Vdc, I
D
= 100
mAdc)
V
(BR)GSS
I
GSS
鈥?/div>
鈥?/div>
V
GS(off)
V
GS
鈥?.5
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?.5
鈥?.0
鈥?00
鈥?.0
鈥?/div>
Vdc
Vdc
鈥?5
鈥?/div>
鈥?/div>
Vdc
nAdc
ON CHARACTERISTICS
Zero鈥揋ate鈥揤oltage Drain Current (1)
(V
DS
= 15 Vdc, V
GS
= 0)
I
DSS
1.0
3.0
5.0
mAdc
SMALL鈥揝IGNAL CHARACTERISTICS
Forward Transfer Admittance Common Source (1)
(V
DS
= 15 Vdc, V
GS
= 0, f = 1.0 kHz)
Output Admittance Common Source (1)
(V
DS
= 15 Vdc, V
GS
= 0, f = 1.0 kHz)
Input Capacitance
(V
DS
= 15 Vdc, V
GS
= 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(V
DS
= 15 Vdc, V
GS
= 0, f = 1.0 MHz)
1. Pulse Test; Pulse Width
v
630 ms, Duty Cycle
v
10%.
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
漏
Semiconductor Components Industries, LLC, 2001
錚磞
fs
錚?/div>
錚磞
os
錚?/div>
C
iss
C
rss
1000
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
10
4.5
1.5
5000
50
7.0
3.0
mmhos
mmhos
pF
pF
1
May, 2001 鈥?Rev. 2
Publication Order Number:
2N5457/D
2N5457/D相關型號PDF文件下載
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型號
版本
描述
廠商
下載
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