MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N5400/D
Amplifier Transistors
PNP Silicon
2N5400
2N5401*
*Motorola Preferred Device
COLLECTOR
3
2
BASE
1
EMITTER
1
2
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TA = 25擄C
Derate above 25擄C
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
2N5400 2N5401
120
130
5.0
600
625
5.0
1.5
12
鈥?55 to +150
150
160
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/擄C
Watts
mW/擄C
擄C
3
CASE 29鈥?4, STYLE 1
TO鈥?2 (TO鈥?26AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
200
83.3
Unit
擄C/W
擄C/W
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
Collector 鈥?Base Breakdown Voltage
(IC = 100
m
Adc, IE = 0)
Emitter 鈥?Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0)
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
(VCB = 120 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0, TA = 100擄C)
(VCB = 120 Vdc, IE = 0, TA = 100擄C)
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
1. Pulse Test: Pulse Width = 300
m
s, Duty Cycle = 2.0%.
Preferred
devices are Motorola recommended choices for future use and best overall value.
V(BR)CEO
2N5400
2N5401
V(BR)CBO
2N5400
2N5401
V(BR)EBO
ICBO
2N5400
2N5401
2N5400
2N5401
IEBO
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
100
50
100
50
50
130
160
5.0
鈥?/div>
鈥?/div>
鈥?/div>
120
150
鈥?/div>
鈥?/div>
Vdc
Vdc
Vdc
nAdc
碌A(chǔ)dc
nAdc
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
2N5401G相關(guān)型號(hào)PDF文件下載
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